1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications

Abstract

In this study, the device properties of gallium nitride (GaN) enhancement-mode (E-mode) recessed-gate high-electron-mobility transistor (HEMT) are thoroughly characterized and investigated for low-noise amplifier (LNA) applications. Through low-damage argon-based neutral beam etching (Ar-NBE) technology, the recessed-gate HEMT achieves a positive voltage threshold ( ${V} _{\text {TH}}$ ) of 0.5 V, a maximum transconductance (gm) of 148 mS/mm, and an on-state gate leakage current ( ${I} _{\text {G}}$ ) of 2.39 nA/mm. The device reveals a 1.48-dB minimum noise figure (NFmin), a 14.43-dB associated gain ( ${G} _{\text {a}}$ ), and a 40.2- $\Omega $ equivalent noise resistance ( ${R} _{\text {N}}$ ), at a working frequency of 2 GHz. As the frequency increases to 3.5 GHz, the NFmin slightly increases to 1.95 dB. In addition, the device obtained a cutoff frequency ( ${f} _{\text {T}}$ / ${f} _{\text {MAX}}$ ) of 9.6/27.8 GHz and an input third-order interception point (IIP3) of 10.3 dBm at 2 GHz. This work provides a promising strategy for the implementation of high-performance E-mode LNAs.