Mathematical Modeling of Field Emission From a Microscale-Size Cathode to a Vacuum

IF 3.2 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2025-02-17 DOI:10.1109/TED.2025.3535843
V. G. Danilov;V. D. Borisov
{"title":"Mathematical Modeling of Field Emission From a Microscale-Size Cathode to a Vacuum","authors":"V. G. Danilov;V. D. Borisov","doi":"10.1109/TED.2025.3535843","DOIUrl":null,"url":null,"abstract":"In this article, we propose a numerical method for calculating solutions of the PDE (the heat equation for the cathode temperature and the continuity equation for the current density inside and outside the cathode) with discontinuous flux at the emission surface of a cathode placed in a vacuum. The discontinuity of the flux appears because of the Nottingham effect and tunneling of emitting electrons. In the present article, this approach is applied to mathematical modeling of field emission from a conic silicon cathode of small size (about ten micrometers) to a vacuum, but can be used in other problems with similar types of flux jumps.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1462-1468"},"PeriodicalIF":3.2000,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10891157/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

In this article, we propose a numerical method for calculating solutions of the PDE (the heat equation for the cathode temperature and the continuity equation for the current density inside and outside the cathode) with discontinuous flux at the emission surface of a cathode placed in a vacuum. The discontinuity of the flux appears because of the Nottingham effect and tunneling of emitting electrons. In the present article, this approach is applied to mathematical modeling of field emission from a conic silicon cathode of small size (about ten micrometers) to a vacuum, but can be used in other problems with similar types of flux jumps.
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从微尺度阴极到真空场发射的数学模型
在本文中,我们提出了一种计算真空中阴极发射表面具有不连续通量的PDE(阴极温度的热方程和阴极内外电流密度的连续性方程)解的数值方法。由于诺丁汉效应和发射电子的隧穿作用,磁通量出现了不连续。在本文中,这种方法被应用于小尺寸(约10微米)的锥形硅阴极到真空的场发射的数学建模,但也可以用于具有类似类型的通量跳变的其他问题。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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