Compact Modeling of Near-Infrared Heterojunction Organic Phototransistors Based on Tin Phthalocyanine

IF 3.2 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2025-01-22 DOI:10.1109/TED.2025.3529402
Qiyue Zhang;Xiancheng Cao;Jiapei Huang;Xiaoyue Xu;Yingquan Peng;Wenli Lv;Sunan Xu;Lei Sun;Lin Jiang
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Abstract

Rapid progress has been achieved in experimental research of heterojunction organic phototransistors (HJ-OPTs); however, a model that captures essential physical phenomena occurring in HJ-OPTs is still lacking. Herein, we developed a compact model for HJ-OPTs by associating the excitonic photocarrier generation, the approach of equivalent the effect of light illumination as an additional gate voltage, and the power law dependence of photocarrier sheet density on light intensity with the generic 1-D charge drift theory for organic field-effect transistors (OFETs). The model can describe the output and transfer characteristics of HJ-OPTs both in the dark and under illumination. We fabricated and characterized an HJ-OPT based on C60/tin phthalocyanine (SnPc), and calculated its output and transfer characteristics, as well as photoresponsivity with the developed model. Excellent agreements between experiment and model fitting were obtained with the exception of the dark output curves in the case of high drain and gate voltages. Extending the model by incorporating the short-channel effect (SCE) and contact resistance effect, the imperfectness could be completely eliminated. The validation results showed that this model can be effectively applied to HJ-OPTs, which is of great significance for optimizing their performance in the future.
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基于酞菁锡的近红外异质结有机光电晶体管的紧凑建模
异质结有机光电晶体管(HJ-OPTs)的实验研究取得了快速进展;然而,仍然缺乏捕获hj - opt中发生的基本物理现象的模型。在此,我们将激子光载流子的产生、光照明等效为附加门电压的方法、光载流子片密度和光强的幂律关系与有机场效应晶体管(ofet)的通用一维电荷漂移理论联系起来,建立了一个紧凑的HJ-OPTs模型。该模型可以描述在黑暗和光照条件下HJ-OPTs的输出和传输特性。我们制备了基于C60/锡酞菁(SnPc)的HJ-OPT并对其进行了表征,并利用所建立的模型计算了其输出、转移特性和光响应性。除了在高漏极和栅极电压情况下的暗输出曲线外,实验结果与模型拟合结果非常吻合。通过引入短通道效应(SCE)和接触电阻效应对模型进行扩展,可以完全消除缺陷。验证结果表明,该模型可以有效地应用于hj - opt,对未来优化其性能具有重要意义。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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