Harmonic Klystron Frequency Converter

IF 3.2 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2025-01-22 DOI:10.1109/TED.2025.3527434
Alberto Leggieri;Mostafa Behtouei;Graeme Burt;Valery Dolgashev;Franco Di Paolo;Bruno Spataro
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Abstract

A new principle for the design of frequency converters, operating at significantly higher power and efficiency than previous devices, is described in this article. The presented solution is implemented as a particular klystron topology for which a new design criterion is formulated through analytical expressions and a specific design procedure. The described frequency multiplier is suitable for telecommunications, nonlethal weapons, or scientific and medical particle accelerators, where the most interested exploitation is in the field of high gradient particle acceleration and free electron laser (FEL) devices for which no current sources meet the required performance. The frequency converter replaces all the low-level circuitry needed for frequency multiplication, representing a less expensive alternative. The presented structure can offer efficiencies in the range of 50%–60% in the Ka-band with power levels of 20–30 MW without phase noise, sideband generation, jitter, or chirp effects. The proposed principle is also applicable to other bands or power ranges.
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谐波速调管变频器
本文描述了一种设计变频器的新原理,它的功率和效率明显高于以前的器件。所提出的解决方案是作为一种特定的速调管拓扑来实现的,通过解析表达式和特定的设计过程来制定新的设计准则。所描述的倍频器适用于电信、非致命武器或科学和医疗粒子加速器,其中最感兴趣的开发领域是高梯度粒子加速和自由电子激光(FEL)设备,这些设备没有电流源满足所需的性能。变频器取代了所有的低级电路所需的频率乘法,代表了一个更便宜的选择。所提出的结构可以在ka波段提供50%-60%的效率,功率水平为20-30 MW,没有相位噪声、边带产生、抖动或啁啾效应。所提出的原理也适用于其他频段或功率范围。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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