{"title":"The Implications of Collisions on the Spatial Profile of Electric Potential and the Space-Charge-Limited Current","authors":"Allen L. Garner;N. R. Sree Harsha","doi":"10.1109/TED.2025.3531824","DOIUrl":null,"url":null,"abstract":"The space-charge-limited current (SCLC) in a vacuum diode is given by the Child-Langmuir law (CLL), whose electric potential <inline-formula> <tex-math>${\\phi }\\text {(}{x}\\text {)}\\propto \\text {(}{x} /{D}\\text {)}^{{4} /{3}}$ </tex-math></inline-formula>, where x is the spatial coordinate across the gap and D is the gap separation distance. For a collisional diode, SCLC is given by the Mott-Gurney law (MGL) and <inline-formula> <tex-math>${\\phi }\\text {(} {x}\\text {)}\\propto \\text {(}{x} /{D}\\text {)}^{{3} / {2}}$ </tex-math></inline-formula>. Here, we apply a capacitance argument for SCLC and use the transit time from a recent exact solution for collisional SCLC to show that <inline-formula> <tex-math>${\\phi }\\text {(}{x}\\text {)}\\propto \\text {(}{x}/{D}\\text {)}^{\\xi }$ </tex-math></inline-formula> for a general collisional gap, where <inline-formula> <tex-math>${4} / {3}\\le \\xi \\le {3}/ {2}$ </tex-math></inline-formula>. Furthermore, <inline-formula> <tex-math>$\\xi $ </tex-math></inline-formula> is strictly a function of <inline-formula> <tex-math>$\\nu {T}$ </tex-math></inline-formula>, where <inline-formula> <tex-math>$\\nu $ </tex-math></inline-formula> is the collision frequency and T is the electron transit time. Using this definition of <inline-formula> <tex-math>$\\xi $ </tex-math></inline-formula>, we estimate the spatial dependence of the electron velocity and use the gap capacitance to derive an analytic equation for collisional SCLC that agrees within ~4.5% of the exact solution that requires solving parametrically through T. This analytic equation for general <inline-formula> <tex-math>$\\xi $ </tex-math></inline-formula> asymptotically recovers the CLL as <inline-formula> <tex-math>${\\nu }\\to {0}$ </tex-math></inline-formula> and the MGL as <inline-formula> <tex-math>${\\nu } \\to \\infty $ </tex-math></inline-formula>. Matching these limits shows that <inline-formula> <tex-math>${\\xi }\\approx {1.40}$ </tex-math></inline-formula> and <inline-formula> <tex-math>${V}\\propto {D}^{{2}}{\\nu }^{{2}}$ </tex-math></inline-formula> at the transition from a vacuum to a collisional diode for any device condition.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1419-1426"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10870297/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The space-charge-limited current (SCLC) in a vacuum diode is given by the Child-Langmuir law (CLL), whose electric potential ${\phi }\text {(}{x}\text {)}\propto \text {(}{x} /{D}\text {)}^{{4} /{3}}$ , where x is the spatial coordinate across the gap and D is the gap separation distance. For a collisional diode, SCLC is given by the Mott-Gurney law (MGL) and ${\phi }\text {(} {x}\text {)}\propto \text {(}{x} /{D}\text {)}^{{3} / {2}}$ . Here, we apply a capacitance argument for SCLC and use the transit time from a recent exact solution for collisional SCLC to show that ${\phi }\text {(}{x}\text {)}\propto \text {(}{x}/{D}\text {)}^{\xi }$ for a general collisional gap, where ${4} / {3}\le \xi \le {3}/ {2}$ . Furthermore, $\xi $ is strictly a function of $\nu {T}$ , where $\nu $ is the collision frequency and T is the electron transit time. Using this definition of $\xi $ , we estimate the spatial dependence of the electron velocity and use the gap capacitance to derive an analytic equation for collisional SCLC that agrees within ~4.5% of the exact solution that requires solving parametrically through T. This analytic equation for general $\xi $ asymptotically recovers the CLL as ${\nu }\to {0}$ and the MGL as ${\nu } \to \infty $ . Matching these limits shows that ${\xi }\approx {1.40}$ and ${V}\propto {D}^{{2}}{\nu }^{{2}}$ at the transition from a vacuum to a collisional diode for any device condition.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.