The Implications of Collisions on the Spatial Profile of Electric Potential and the Space-Charge-Limited Current

IF 3.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2025-02-04 DOI:10.1109/TED.2025.3531824
Allen L. Garner;N. R. Sree Harsha
{"title":"The Implications of Collisions on the Spatial Profile of Electric Potential and the Space-Charge-Limited Current","authors":"Allen L. Garner;N. R. Sree Harsha","doi":"10.1109/TED.2025.3531824","DOIUrl":null,"url":null,"abstract":"The space-charge-limited current (SCLC) in a vacuum diode is given by the Child-Langmuir law (CLL), whose electric potential <inline-formula> <tex-math>${\\phi }\\text {(}{x}\\text {)}\\propto \\text {(}{x} /{D}\\text {)}^{{4} /{3}}$ </tex-math></inline-formula>, where x is the spatial coordinate across the gap and D is the gap separation distance. For a collisional diode, SCLC is given by the Mott-Gurney law (MGL) and <inline-formula> <tex-math>${\\phi }\\text {(} {x}\\text {)}\\propto \\text {(}{x} /{D}\\text {)}^{{3} / {2}}$ </tex-math></inline-formula>. Here, we apply a capacitance argument for SCLC and use the transit time from a recent exact solution for collisional SCLC to show that <inline-formula> <tex-math>${\\phi }\\text {(}{x}\\text {)}\\propto \\text {(}{x}/{D}\\text {)}^{\\xi }$ </tex-math></inline-formula> for a general collisional gap, where <inline-formula> <tex-math>${4} / {3}\\le \\xi \\le {3}/ {2}$ </tex-math></inline-formula>. Furthermore, <inline-formula> <tex-math>$\\xi $ </tex-math></inline-formula> is strictly a function of <inline-formula> <tex-math>$\\nu {T}$ </tex-math></inline-formula>, where <inline-formula> <tex-math>$\\nu $ </tex-math></inline-formula> is the collision frequency and T is the electron transit time. Using this definition of <inline-formula> <tex-math>$\\xi $ </tex-math></inline-formula>, we estimate the spatial dependence of the electron velocity and use the gap capacitance to derive an analytic equation for collisional SCLC that agrees within ~4.5% of the exact solution that requires solving parametrically through T. This analytic equation for general <inline-formula> <tex-math>$\\xi $ </tex-math></inline-formula> asymptotically recovers the CLL as <inline-formula> <tex-math>${\\nu }\\to {0}$ </tex-math></inline-formula> and the MGL as <inline-formula> <tex-math>${\\nu } \\to \\infty $ </tex-math></inline-formula>. Matching these limits shows that <inline-formula> <tex-math>${\\xi }\\approx {1.40}$ </tex-math></inline-formula> and <inline-formula> <tex-math>${V}\\propto {D}^{{2}}{\\nu }^{{2}}$ </tex-math></inline-formula> at the transition from a vacuum to a collisional diode for any device condition.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1419-1426"},"PeriodicalIF":3.6000,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10870297/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

The space-charge-limited current (SCLC) in a vacuum diode is given by the Child-Langmuir law (CLL), whose electric potential ${\phi }\text {(}{x}\text {)}\propto \text {(}{x} /{D}\text {)}^{{4} /{3}}$ , where x is the spatial coordinate across the gap and D is the gap separation distance. For a collisional diode, SCLC is given by the Mott-Gurney law (MGL) and ${\phi }\text {(} {x}\text {)}\propto \text {(}{x} /{D}\text {)}^{{3} / {2}}$ . Here, we apply a capacitance argument for SCLC and use the transit time from a recent exact solution for collisional SCLC to show that ${\phi }\text {(}{x}\text {)}\propto \text {(}{x}/{D}\text {)}^{\xi }$ for a general collisional gap, where ${4} / {3}\le \xi \le {3}/ {2}$ . Furthermore, $\xi $ is strictly a function of $\nu {T}$ , where $\nu $ is the collision frequency and T is the electron transit time. Using this definition of $\xi $ , we estimate the spatial dependence of the electron velocity and use the gap capacitance to derive an analytic equation for collisional SCLC that agrees within ~4.5% of the exact solution that requires solving parametrically through T. This analytic equation for general $\xi $ asymptotically recovers the CLL as ${\nu }\to {0}$ and the MGL as ${\nu } \to \infty $ . Matching these limits shows that ${\xi }\approx {1.40}$ and ${V}\propto {D}^{{2}}{\nu }^{{2}}$ at the transition from a vacuum to a collisional diode for any device condition.
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碰撞对电势空间分布和空间电荷限制电流的影响
真空二极管中的空间电荷限制电流(SCLC)由Child-Langmuir定律(CLL)给出,其电势${\phi }\text {(}{x}\text {)}\propto \text {(}{x} /{D}\text {)}^{{4} /{3}}$,其中x是穿过间隙的空间坐标,D是间隙分离距离。对于碰撞二极管,SCLC由莫特-格尼定律(MGL)和${\phi }\text {(} {x}\text {)}\propto \text {(}{x} /{D}\text {)}^{{3} / {2}}$给出。在这里,我们将电容参数应用于SCLC,并使用来自最近碰撞SCLC精确解的传输时间来证明${\phi }\text {(}{x}\text {)}\propto \text {(}{x}/{D}\text {)}^{\xi }$对于一般碰撞间隙,其中${4} / {3}\le \xi \le {3}/ {2}$。更进一步,$\xi $是$\nu {T}$的严格函数,其中$\nu $为碰撞频率,T为电子传递时间。利用$\xi $的定义,我们估计了电子速度的空间依赖性,并利用间隙电容推导出碰撞SCLC的解析方程,该方程在4.5以内一致% of the exact solution that requires solving parametrically through T. This analytic equation for general $\xi $ asymptotically recovers the CLL as ${\nu }\to {0}$ and the MGL as ${\nu } \to \infty $ . Matching these limits shows that ${\xi }\approx {1.40}$ and ${V}\propto {D}^{{2}}{\nu }^{{2}}$ at the transition from a vacuum to a collisional diode for any device condition.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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