SAW Temperature and Humidity Assembled Sensor Based on AlScN Piezoelectric Thin Film

IF 3.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2025-02-04 DOI:10.1109/TED.2024.3520544
Yue Hu;Yuxin Wang;Chuanxu Li;Hao Ren;Liang Lou
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Abstract

This article proposes a temperature-humidity assembled sensor based on AlScN surface acoustic wave (SAW) technology for simultaneous monitoring of temperature and humidity. The assembled sensor includes two SAW resonators with frequencies of 475 and 493.675 MHz. The AlScN thin film serves as the piezoelectric film for the temperature and humidity sensor. Graphene oxide (GO) is used as the humidity-sensitive film in the sensor. The humidity sensor can detect a frequency shift of 587.5 kHz within the range of 20%–90% RH, with sensitivities of 4.75 kHz/%RH at low humidity (20%–50% RH), 9.33 kHz/%RH at medium humidity (50%–80% RH), and 16.3 kHz/%RH at high humidity levels (80%–90% RH). The assembled sensor demonstrates excellent stability and repeatability, with a response time and recovery time of 8.5 and 6 s, respectively. The temperature and humidity sensors have a similar temperature coefficient of frequency (TCF). The sensor measures ambient temperature using the temperature sensor and employs a decoupling algorithm to mitigate the impact of temperature on the humidity sensor, improving its accuracy.
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基于AlScN压电薄膜的SAW温湿度组合传感器
本文提出了一种基于AlScN表面声波(SAW)技术的温湿度组合传感器,用于同时监测温湿度。组装的传感器包括两个频率为475和493.675 MHz的SAW谐振器。AlScN薄膜作为温湿度传感器的压电薄膜。在传感器中使用氧化石墨烯(GO)作为湿度敏感膜。湿度传感器在20% ~ 90% RH范围内可检测到587.5 kHz的频移,在低湿度(20% ~ 50% RH)下灵敏度为4.75 kHz/%RH,在中湿度(50% ~ 80% RH)下灵敏度为9.33 kHz/%RH,在高湿度(80% ~ 90% RH)下灵敏度为16.3 kHz/%RH。该传感器具有良好的稳定性和重复性,响应时间和恢复时间分别为8.5 s和6 s。温度传感器和湿度传感器具有相似的温度频率系数(TCF)。该传感器通过温度传感器测量环境温度,并采用解耦算法减轻温度对湿度传感器的影响,提高湿度传感器的精度。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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