Design and Cold Test of a Broadly Tunable Terahertz Short Double-Grating Rectangular Waveguide Slow Wave Structure

IF 3.2 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2025-02-10 DOI:10.1109/TED.2025.3534152
Jibran Latif;Zhanliang Wang;Atif Jameel;Muhammad Khawar Nadeem;Bilawal Ali;Shaomeng Wang;Yubin Gong;Huarong Gong
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Abstract

A short double-grating rectangular waveguide (DGRW) slow wave structure (SWS) is designed and compared in detail with DGRW. Significant modifications are made to the corrugation geometry to optimize the dispersion characteristics, resulting in a broader frequency passband and enhanced frequency tunability. The high-frequency performance is analyzed in terms of dispersion and interaction impedance. The structure shows an interaction impedance of $1.5~\Omega $ at 0.34 THz. To confirm the effectiveness of the proposed design, a 0.34-THz backward wave oscillator circuit is designed and fabricated comprising 160 periods. The circuit is assembled and cold-tested for scattering parameters. The results show ${S}_{{21}}$ values above −1.5 dB and ${S}_{{11}}$ below −20 dB for a broad frequency range. The beam-wave interaction simulations using a 30-kV, 30-mA electron beam, and 0.2-T focusing magnetic field show that the backward wave oscillator based on the proposed design achieves an average output power of 16 W at 0.34 THz, with a frequency tuning range of 95 GHz when compared with 57 GHz for the DGRW-based backward wave oscillator.
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宽可调谐太赫兹短双光栅矩形波导慢波结构的设计与冷试验
设计了一种短双光栅矩形波导慢波结构,并与DGRW进行了详细比较。对波纹几何形状进行了重大修改,以优化色散特性,从而产生更宽的频率通带和增强的频率可调性。从色散和相互作用阻抗两方面分析了高频性能。该结构在0.34太赫兹下的相互作用阻抗为$1.5~\Omega $。为了验证所提设计的有效性,设计并制作了一个包含160个周期的0.34太赫兹后向波振荡器电路。组装电路并对其散射参数进行了冷态测试。结果表明,在较宽的频率范围内,${S}_{{11}}$值大于- 1.5 dB, ${S}_{{11}}$值小于- 20 dB。利用30 kv、30 ma电子束和0.2 t聚焦磁场进行的波束-波相互作用仿真表明,基于该设计的后向波振荡器在0.34太赫兹时的平均输出功率为16 W,频率调谐范围为95 GHz,而基于dgrw的后向波振荡器的频率调谐范围为57 GHz。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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