Kazuhiro Kanda , Daisuke Niwa , Tomohiro Mishima , Fuminobu Hori , Atsushi Yabuuchi , Atsushi Kinomura
{"title":"Effect of soft X-rays on vacancy-type defects in highly hydrogenated DLC films","authors":"Kazuhiro Kanda , Daisuke Niwa , Tomohiro Mishima , Fuminobu Hori , Atsushi Yabuuchi , Atsushi Kinomura","doi":"10.1016/j.diamond.2025.112136","DOIUrl":null,"url":null,"abstract":"<div><div>Processes for modifying highly hydrogenated diamond-like carbon (H-DLC) films by soft X-ray irradiation were investigated by obtaining information on vacancy-type defects from positron annihilation spectroscopy measurements using slow positron beams. The vacancy-type defects in the H-DLC films were found to increase even through soft X-ray irradiation caused the density of the films to increase. In addition, despite the increase in vacancy-type defects, the Doppler shift of γ-rays produced by annihilation was found to increase, and it was concluded that this increase was due to the chemical environment around the vacancy-type defects changing from hydrogen to carbon upon soft X-ray irradiation.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"154 ","pages":"Article 112136"},"PeriodicalIF":5.1000,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Diamond and Related Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925963525001931","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
引用次数: 0
Abstract
Processes for modifying highly hydrogenated diamond-like carbon (H-DLC) films by soft X-ray irradiation were investigated by obtaining information on vacancy-type defects from positron annihilation spectroscopy measurements using slow positron beams. The vacancy-type defects in the H-DLC films were found to increase even through soft X-ray irradiation caused the density of the films to increase. In addition, despite the increase in vacancy-type defects, the Doppler shift of γ-rays produced by annihilation was found to increase, and it was concluded that this increase was due to the chemical environment around the vacancy-type defects changing from hydrogen to carbon upon soft X-ray irradiation.
期刊介绍：
DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices.
The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
