Vishal Gubbi , Tzvetan Ivanov , Kalpan Ved , Claudia Lenk , Martin Ziegler
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引用次数: 0
Abstract
A microelectromechanical system (MEMS) – based acoustic sensor with adaptive bandpass characteristics is presented, i.e. its resonance frequency can be dynamically modified by up to 25 % using relatively small bias voltages (<1 V). This allows for a frequency analysis of sound in hardware, for covering larger frequency ranges with a single sensor while retaining high quality factors, adapting the sensor for optimum detection performance under different conditions and compensating for mismatches due to fabrication tolerances. To achieve this, we utilize geometric nonlinearity effects through incorporating a clamped-clamped micromechanical beam. We show that for the fabricated sensors, DC actuation changes pre-deflection of the clamped-clamped beam and this pre-deflection changes the resonance frequency of the sensor. To adjust the design parameters, such as geometry, we developed a model, based on the Duffing oscillator equation, which describes the sensor’s nonlinear dynamics, including hardening/softening behavior due to an applied static deflection. We demonstrate the application of the frequency tunability for compensating fabrication variabilities (here thickness variation) and for analysis of frequency components in an applied sound signal. This principle of dynamic frequency tuning and hardware-based frequency analysis using a single MEMS sensor demonstrates potential for applications in (bio-inspired) acoustic sensing, gas flow sensing, and other sensing tasks requiring adaptive, tunable bandpass characteristics and for (adaptive) sensor (oscillator) networks.
期刊介绍：
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...
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