Vertical Phase Separation in Blended Organic Semiconducting Films and Impact on Their Electrical and Direct X-Ray Detection Properties

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Electronic Materials Pub Date : 2025-03-02 DOI:10.1002/aelm.202400887
Maria Elisabetta Giglio, Elisabetta Colantoni, Ilaria Fratelli, Carme Martinez-Domingo, Pedro Martinez-Zaragoza, Giulia Napolitano, Enrico Campari, Paolo Branchini, Beatrice Fraboni, Laura Basiricó, Luca Tortora, Marta Mas-Torrent
{"title":"Vertical Phase Separation in Blended Organic Semiconducting Films and Impact on Their Electrical and Direct X-Ray Detection Properties","authors":"Maria Elisabetta Giglio,&nbsp;Elisabetta Colantoni,&nbsp;Ilaria Fratelli,&nbsp;Carme Martinez-Domingo,&nbsp;Pedro Martinez-Zaragoza,&nbsp;Giulia Napolitano,&nbsp;Enrico Campari,&nbsp;Paolo Branchini,&nbsp;Beatrice Fraboni,&nbsp;Laura Basiricó,&nbsp;Luca Tortora,&nbsp;Marta Mas-Torrent","doi":"10.1002/aelm.202400887","DOIUrl":null,"url":null,"abstract":"<p>Blends of small-molecule organic semiconductors (OSCs) and insulating polymers in Organic Field-Effect Transistors (OFETs) are mainly used to assist the solution-processing of OSCs, but they can also reduce interfacial charge traps due to vertical phase separation. Such charge traps are known to affect both the electrical response and radiation-induced charge collection capability in these devices. This study aims to optimize vertical phase separation in blend films of 1,4,8,11-tetramethyl-6,13-triethylsilylethynyl pentacene (TMTES) and polystyrene (PS) to minimize charge trap density at the semiconductor/dielectric interface, thereby enhancing the electrical performance and direct X-ray detection sensitivity in OFETs. A PS mass concentration of 33% is identified as optimal for achieving high-quality phase separation and favorable film morphology. This formulation led to films with reduced interfacial hole trap density and improved electrical and detection capacity, demonstrating a hole field-effect mobility of (1.3 ± 0.4) cm<sup>2 </sup>V<sup>−1</sup> s<sup>−1</sup> and X-ray sensitivity of (5.6 ± 0.2) × 10<sup>3</sup> µC Gy<sup>−1</sup> cm<sup>−2</sup> at low applied voltages. Remarkably, the molecular weight of PS does not significantly impact vertical phase separation, thin film morphology, or electrical properties. These findings are crucial for the development of high-performance OFETs and their application as X-ray detectors.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 17","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400887","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202400887","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Blends of small-molecule organic semiconductors (OSCs) and insulating polymers in Organic Field-Effect Transistors (OFETs) are mainly used to assist the solution-processing of OSCs, but they can also reduce interfacial charge traps due to vertical phase separation. Such charge traps are known to affect both the electrical response and radiation-induced charge collection capability in these devices. This study aims to optimize vertical phase separation in blend films of 1,4,8,11-tetramethyl-6,13-triethylsilylethynyl pentacene (TMTES) and polystyrene (PS) to minimize charge trap density at the semiconductor/dielectric interface, thereby enhancing the electrical performance and direct X-ray detection sensitivity in OFETs. A PS mass concentration of 33% is identified as optimal for achieving high-quality phase separation and favorable film morphology. This formulation led to films with reduced interfacial hole trap density and improved electrical and detection capacity, demonstrating a hole field-effect mobility of (1.3 ± 0.4) cm2 V−1 s−1 and X-ray sensitivity of (5.6 ± 0.2) × 103 µC Gy−1 cm−2 at low applied voltages. Remarkably, the molecular weight of PS does not significantly impact vertical phase separation, thin film morphology, or electrical properties. These findings are crucial for the development of high-performance OFETs and their application as X-ray detectors.

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混合有机半导体薄膜中的垂直相分离及其对电学和直接 X 射线探测特性的影响
有机场效应晶体管(ofet)中的小分子有机半导体(OSCs)和绝缘聚合物的共混物主要用于辅助OSCs的溶液处理,但它们也可以减少由于垂直相分离而导致的界面电荷陷阱。已知这种电荷陷阱会影响这些器件的电响应和辐射感应电荷收集能力。本研究旨在优化1,4,8,11-四甲基-6,13-三乙基硅乙基戊二烯(TMTES)和聚苯乙烯(PS)共混薄膜的垂直相分离,以最小化半导体/介电界面处的电荷阱密度,从而提高ofet的电学性能和直接x射线探测灵敏度。33%的PS质量浓度被确定为获得高质量的相分离和良好的膜形态的最佳选择。该方法降低了薄膜的界面空穴阱密度,提高了电学和检测能力,在低电压下,空穴场效应迁移率为(1.3±0.4)cm2 V−1 s−1,x射线灵敏度为(5.6±0.2)× 103µC Gy−1 cm−2。值得注意的是,PS的分子量对垂直相分离、薄膜形态或电性能没有显著影响。这些发现对于高性能ofet的发展及其作为x射线探测器的应用至关重要。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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