Efficient post-treatment strategy for enhancing the performance and stability of the inverted perovskite solar cells based on Boc-D-Val-OH

IF 2.6 4区 工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Organic Electronics Pub Date : 2025-03-01 DOI:10.1016/j.orgel.2025.107228
Fu Liu , Yijun Zhu , Jian Xiong , Zhen He , Yuanwei Pu , Yongchao Liang , Qiaofei Hu , Yinqi Zuo , Qiyu Yang , Dongjie Wang , Yu Huang , Qiaogan Liao , Zheling Zhang , Jian Zhang
{"title":"Efficient post-treatment strategy for enhancing the performance and stability of the inverted perovskite solar cells based on Boc-D-Val-OH","authors":"Fu Liu ,&nbsp;Yijun Zhu ,&nbsp;Jian Xiong ,&nbsp;Zhen He ,&nbsp;Yuanwei Pu ,&nbsp;Yongchao Liang ,&nbsp;Qiaofei Hu ,&nbsp;Yinqi Zuo ,&nbsp;Qiyu Yang ,&nbsp;Dongjie Wang ,&nbsp;Yu Huang ,&nbsp;Qiaogan Liao ,&nbsp;Zheling Zhang ,&nbsp;Jian Zhang","doi":"10.1016/j.orgel.2025.107228","DOIUrl":null,"url":null,"abstract":"<div><div>Recombination losses from perovskite/fullerene interface issues significantly limit the performance and stability of inverted perovskite solar cells (PSCs). A simple post-treatment method based on Boc-D-Val-OH (BDVO) is developed to overcome these issues. A systematic study has been conducted on the impact of BDVO on the physical properties of the film and the device. The results confirm that BDVO post-treatment can passivate trap states of the perovskite film surface, improve contact at the perovskite/fullerene interface, and enhance the built-in interface electrical field of the device. That improvements lead to enhanced carrier transport dynamics, as well as improves the performance and stability of PSCs. A relatively higher power conversion efficiency (PCE) of 23.02 % is achieved by BDVO post-treatment. Additionally, after storage in air (30–40 RH%) for 264 h (12 days) and in N<sub>2</sub> for 312 h (13 days), the PCE of the BDVO devices can remain at 90 % and 95 % of their initial values, respectively, while the control devices under the same exposure conditions only maintain 83 % and 88 % of their initial PCE values. The study sheds light on the pathway for perovskite/fullerene interface material selection and design, aimed at enhancing device performance and stability through streamlined post-treatment.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"141 ","pages":"Article 107228"},"PeriodicalIF":2.6000,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Organic Electronics","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1566119925000345","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Recombination losses from perovskite/fullerene interface issues significantly limit the performance and stability of inverted perovskite solar cells (PSCs). A simple post-treatment method based on Boc-D-Val-OH (BDVO) is developed to overcome these issues. A systematic study has been conducted on the impact of BDVO on the physical properties of the film and the device. The results confirm that BDVO post-treatment can passivate trap states of the perovskite film surface, improve contact at the perovskite/fullerene interface, and enhance the built-in interface electrical field of the device. That improvements lead to enhanced carrier transport dynamics, as well as improves the performance and stability of PSCs. A relatively higher power conversion efficiency (PCE) of 23.02 % is achieved by BDVO post-treatment. Additionally, after storage in air (30–40 RH%) for 264 h (12 days) and in N2 for 312 h (13 days), the PCE of the BDVO devices can remain at 90 % and 95 % of their initial values, respectively, while the control devices under the same exposure conditions only maintain 83 % and 88 % of their initial PCE values. The study sheds light on the pathway for perovskite/fullerene interface material selection and design, aimed at enhancing device performance and stability through streamlined post-treatment.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
提高Boc-D-Val-OH倒置钙钛矿太阳能电池性能和稳定性的有效后处理策略
钙钛矿/富勒烯界面问题导致的复合损失严重限制了倒钙钛矿太阳能电池(PSCs)的性能和稳定性。为了克服这些问题,开发了一种基于Boc-D-Val-OH (BDVO)的简单后处理方法。系统地研究了BDVO对薄膜和器件物理性能的影响。结果证实,BDVO后处理可以钝化钙钛矿膜表面的陷阱态,改善钙钛矿/富勒烯界面处的接触,增强器件的内置界面电场。这种改进增强了载流子传输动力学,并提高了psc的性能和稳定性。BDVO后处理的功率转换效率(PCE)相对较高,达到23.02%。此外,在空气(30-40 RH%)中储存264 h(12天)和在N2中储存312 h(13天)后,BDVO装置的PCE分别保持在其初始值的90%和95%,而在相同暴露条件下的对照装置仅保持其初始PCE值的83%和88%。该研究揭示了钙钛矿/富勒烯界面材料选择和设计的途径,旨在通过简化后处理提高器件的性能和稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Organic Electronics
Organic Electronics 工程技术-材料科学:综合
CiteScore
6.60
自引率
6.20%
发文量
238
审稿时长
44 days
期刊介绍: Organic Electronics is a journal whose primary interdisciplinary focus is on materials and phenomena related to organic devices such as light emitting diodes, thin film transistors, photovoltaic cells, sensors, memories, etc. Papers suitable for publication in this journal cover such topics as photoconductive and electronic properties of organic materials, thin film structures and characterization in the context of organic devices, charge and exciton transport, organic electronic and optoelectronic devices.
期刊最新文献
Electrode engineering for electron and hole injection control in ambipolar polymer transistors toward complementary circuits TADF and HLCT emission switching by changing the intramolecular charge transfer properties through modification of substituent orientation Highly-efficient narrowband green OLEDs with suppressed efficiency roll-off enabled by through-space charge transfer type TADF sensitizers Isomerized solid additive yields stable organic solar cells Gate-voltage-dependent ionic diffusion and transient dynamics in organic electrochemical transistors
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1