Design of a VDBA-Based Memristor Emulator and Its Application for Bio-Sensing Through Instrument Amplifier

IF 1.9 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY IEEE Open Journal of Nanotechnology Pub Date : 2025-02-20 DOI:10.1109/OJNANO.2025.3544166
Pulak Mondal;Subhasish Banerjee;Mourina Ghosh;Ankur Singh;Santosh Kumar
{"title":"Design of a VDBA-Based Memristor Emulator and Its Application for Bio-Sensing Through Instrument Amplifier","authors":"Pulak Mondal;Subhasish Banerjee;Mourina Ghosh;Ankur Singh;Santosh Kumar","doi":"10.1109/OJNANO.2025.3544166","DOIUrl":null,"url":null,"abstract":"This study describes a VDBA (Voltage Differencing Buffered Amplifier)-based memristor emulator and its use in an instrumentation amplifier for biomedical applications. The proposed grounded and floating memristor has been implemented using a single VDBA and grounded MOS-Capacitor. The VDBA used in this article has also been designed and uses eighteen transistors only. The proposed memristor emulator can be operated in both decremental and incremental modes. The suggested emulator's robustness has been verified using a variety of evaluations, including non-ideal inspection, variations of process corner, temperature swings, and non-volatility performance. Using 45 nm CMOS process parameters in the Cadence environment, the layout has been accomplished, and simulations and observations of the theoretical fingerprint characteristics have been made. The incremental and decremental mode of operation for grounded/floating memristor can be easily obtained by modifying the circuit slightly. The shape of the pinched-hysteresis loop is maintained up to 5 MHz. The functionality of the proposed memristor has also been tested by integrating it with the Instrumentation amplifier to amplify weak bio-medical signals.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"35-43"},"PeriodicalIF":1.9000,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10897813","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Open Journal of Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10897813/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

This study describes a VDBA (Voltage Differencing Buffered Amplifier)-based memristor emulator and its use in an instrumentation amplifier for biomedical applications. The proposed grounded and floating memristor has been implemented using a single VDBA and grounded MOS-Capacitor. The VDBA used in this article has also been designed and uses eighteen transistors only. The proposed memristor emulator can be operated in both decremental and incremental modes. The suggested emulator's robustness has been verified using a variety of evaluations, including non-ideal inspection, variations of process corner, temperature swings, and non-volatility performance. Using 45 nm CMOS process parameters in the Cadence environment, the layout has been accomplished, and simulations and observations of the theoretical fingerprint characteristics have been made. The incremental and decremental mode of operation for grounded/floating memristor can be easily obtained by modifying the circuit slightly. The shape of the pinched-hysteresis loop is maintained up to 5 MHz. The functionality of the proposed memristor has also been tested by integrating it with the Instrumentation amplifier to amplify weak bio-medical signals.
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基于vdba的忆阻器仿真器的设计及其在仪器放大器生物传感中的应用
本文介绍了一种基于VDBA(电压差分缓冲放大器)的忆阻器仿真器及其在生物医学仪器放大器中的应用。所提出的接地和浮动忆阻器已使用单个VDBA和接地mos电容器实现。本文中使用的VDBA也经过了设计,仅使用了18个晶体管。所提出的忆阻器仿真器可以在递减和递增两种模式下工作。所建议的仿真器的鲁棒性已经通过各种评估得到验证,包括非理想检查、过程转角变化、温度波动和非挥发性性能。在Cadence环境下,利用45 nm CMOS工艺参数完成了布局,并对理论指纹特性进行了仿真和观察。通过稍微修改电路,可以很容易地获得接地/浮动忆阻器的增量和递减操作模式。箝位迟滞回路的形状保持在5mhz。通过将所提出的忆阻器与仪器放大器集成以放大微弱的生物医学信号,也对其功能进行了测试。
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CiteScore
3.90
自引率
17.60%
发文量
10
审稿时长
12 weeks
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