Enhanced Light-Scattering Properties of Aqueous Chemical Bath Deposited ZnO Nanowires: Influence of Zinc Source Concentration

IF 2.6 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Electronic Materials Letters Pub Date : 2025-01-18 DOI:10.1007/s13391-025-00545-z
Vinaya Kumar Arepalli, Eunyeong Yang, Choong-Heui Chung
{"title":"Enhanced Light-Scattering Properties of Aqueous Chemical Bath Deposited ZnO Nanowires: Influence of Zinc Source Concentration","authors":"Vinaya Kumar Arepalli,&nbsp;Eunyeong Yang,&nbsp;Choong-Heui Chung","doi":"10.1007/s13391-025-00545-z","DOIUrl":null,"url":null,"abstract":"<div><p>This study investigates the light-diffusing capabilities of ZnO nanowires synthesized using the aqueous chemical bath deposition method on PET substrates. By systematically varying Zn source concentrations, the morphology and optical performance of ZnO nanowires were tuned. Scanning electron microscopy revealed that nanowires grown at optimal Zn sources (0.75 g and 1.2 g) exhibited sharp tip morphologies, while higher or lower Zn sources led to flatter tips due to isotropic growth or insufficient precursor availability. Optical characterization demonstrated that ZnO nanowires grown at 1.2 g of the Zn source achieved a maximum total transmittance of ~ 58% and a scattering angle of 53°, outperforming commercial optical diffusers. The transmission haze values peaked at 98.5% for nanowires grown at 1.2 g of the Zn source, attributed to the enhanced refractive index boundaries and optimized structural properties. These findings highlight the potential of ZnO nanowires as high-performance optical diffusers for advanced optoelectronic applications.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"177 - 183"},"PeriodicalIF":2.6000,"publicationDate":"2025-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-025-00545-z","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

This study investigates the light-diffusing capabilities of ZnO nanowires synthesized using the aqueous chemical bath deposition method on PET substrates. By systematically varying Zn source concentrations, the morphology and optical performance of ZnO nanowires were tuned. Scanning electron microscopy revealed that nanowires grown at optimal Zn sources (0.75 g and 1.2 g) exhibited sharp tip morphologies, while higher or lower Zn sources led to flatter tips due to isotropic growth or insufficient precursor availability. Optical characterization demonstrated that ZnO nanowires grown at 1.2 g of the Zn source achieved a maximum total transmittance of ~ 58% and a scattering angle of 53°, outperforming commercial optical diffusers. The transmission haze values peaked at 98.5% for nanowires grown at 1.2 g of the Zn source, attributed to the enhanced refractive index boundaries and optimized structural properties. These findings highlight the potential of ZnO nanowires as high-performance optical diffusers for advanced optoelectronic applications.

Graphical Abstract

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
化学浴沉积ZnO纳米线增强光散射性能:锌源浓度的影响
本文研究了用化学浴沉积法制备的ZnO纳米线在PET衬底上的光扩散性能。通过系统地改变锌源浓度,可以调整ZnO纳米线的形貌和光学性能。扫描电镜显示,在最佳Zn源(0.75 g和1.2 g)下生长的纳米线表现出尖锐的尖端形貌,而较高或较低Zn源由于各向同性生长或前驱体可用性不足而导致尖端较平坦。光学表征表明,在1.2 g Zn源下生长的ZnO纳米线的最大总透射率为~ 58%,散射角为53°,优于商用光学扩散器。在1.2 g Zn源下生长的纳米线,由于增强的折射率边界和优化的结构特性,透射雾度值达到98.5%。这些发现突出了ZnO纳米线作为先进光电应用的高性能光扩散器的潜力。图形抽象
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Electronic Materials Letters
Electronic Materials Letters 工程技术-材料科学:综合
CiteScore
4.70
自引率
20.80%
发文量
52
审稿时长
2.3 months
期刊介绍: Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
期刊最新文献
CVD Synthesis of High-quality Continuous Fe-Doped WSe2 Using a Solution-Based Precursor Analysis of Crack Parameters and Electrical Property in Flexible Devices Under Bending State Halide Perovskite: The Key to Overcoming von Neumann Bottlenecks in AI Workloads Development of a Semi-embedded Nanofiber Network in a Micro-wrinkle Structure Based on a Heterogeneous Polymer Bilayer for High-performance Stretchable Conductive Films Structural Continuity and Orientation Effects of Organometallic Perovskites
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1