Reversible isotropic strain and huge volume change in the all-d-metal Heusler alloys Mn2NiTi

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-06-15 Epub Date: 2025-03-09 DOI:10.1016/j.mssp.2025.109445
Rui Cai , Zhiyang Wei , Hongjie Ren , Xinyu Zhang , Hanyang Qian , Xiang Lu , Jian Liu , Guowei Li
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Abstract

All-d-metal Heusler ferromagnetic shape memory alloys such as Ni2MnTi and Mn2NiTi, composed entirely of transition metals, have attracted considerable attention for their significant volume change and substantial transformation latent heat, positioning them as ideal candidates for solid-state refrigeration and shape memory applications. However, the weak d-d covalent hybridization results in a broad martensitic transformation (MT) range and considerable hysteresis, complicating phase transformation control. We addressed these challenges by developing a dual-phase structure in Mn50Ni50-xTix alloys (x = 11.0 to 14.5) through systematic optimization of heat treatment conditions. The secondary γ phase provides nucleation sites, promoting MT, and serves as a buffer, absorbing local elastic energy and mitigating plastic deformation of the main phase during the MT. This adjustment reduced the transformation range to 23.9 K and decreased the hysteresis to just 14.0 K for the x = 14.5 alloy. This strategy was also applied to the x = 12.5 alloy, which undergoes MT near room temperature. In-situ digital image correlation (DIC) strain measurements indicate that strain distribution in the x = 12.5 alloy during thermally induced reversible MT is heterogeneous at the local level but isotropic at the macroscopic level. The reversible isotropic strain recorded was −6960 ppm, corresponding to a volume change of −2.06 % and an entropy change of 57.5 J kg−1 K−1, associated with MT. Our findings underscore the pivotal role of exploiting the unique dual-phase structure in all-d-metal Heusler alloys, providing a novel approach for applications in solid-state refrigeration and energy conversion.

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全金属Heusler合金Mn2NiTi的可逆各向同性应变和巨大体积变化
全d金属Heusler铁磁形状记忆合金,如Ni2MnTi和Mn2NiTi,完全由过渡金属组成,因其显著的体积变化和可观的转化潜热而引起了广泛的关注,使其成为固态制冷和形状记忆应用的理想候选者。然而,弱的d-d共价杂化导致马氏体相变(MT)范围宽,滞后性大,使相变控制变得复杂。我们通过系统优化热处理条件,开发了Mn50Ni50-xTix合金(x = 11.0 ~ 14.5)的双相结构,解决了这些挑战。二次γ相提供成核位置,促进相变,并起到缓冲作用,吸收局部弹性能,减轻主相在相变过程中的塑性变形。对于x = 14.5合金,这种调整将相变范围减小到23.9 K,将滞后降低到14.0 K。这一策略也适用于x = 12.5合金,它在室温附近经历MT。原位数字图像相关(DIC)应变测量表明,x = 12.5合金在热诱导可逆MT过程中的应变分布在局部水平上是不均匀的,但在宏观水平上是各向同性的。记录到的可逆各向同性应变为- 6960 ppm,与MT相关的体积变化为- 2.06%,熵变为57.5 J kg−1 K−1。我们的研究结果强调了利用全金属Heusler合金独特的双相结构的关键作用,为固态制冷和能量转换的应用提供了一种新的方法。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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