RGO–MoS₂ Nano-Junction Aggregates Based Flexible Hg (II) Ion Sensors

IF 3.2 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2025-01-28 DOI:10.1109/TED.2025.3529401
Santanab Majumder;Avik Sett;Dipak Kumar Goswami;Tarun Kanti Bhattacharyya
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Abstract

In this study, we demonstrated the fabrication of reduced graphene oxide reduced graphene oxide (RGO)–molybdenum disulfide (MoS2) nano-junction aggregates on flexible interdigitated electrodes (IDEs) as Hg (II) ion sensors for water quality monitoring. The as-fabricated devices showed selective sensitivity toward varying concentrations (from 3 to 12 ppb) of Hg (II) ions in solution, offering a maximum response of ~97% for 12 ppb Hg (II) ions (response time ~4 s) and a sensitivity of 2.2%/ppb (limit of detection: 1 ppb). Bending stress effects on the device were tested by subjecting it to increasing bending angles (15°–90°). They were minimally responsive (maximum variation ~2%) toward bending supported by a fitting model. The sensing performance for the device was explained via a junction-dependent mechanism with a model for supporting the same. Finally, the overall device response was determined analytically by examining the impact of the n, p, and junction regions. The analytical model’s prediction of 96% at 12 ppb was almost similar to the experimental measurement (97%). The analytical model predicted a significant response dependence on the contribution of the n-type (MoS2) and the RGO-MoS2 (pn) junction. The p-type region was less responsive toward the overall sensing performance, which may be attributed to lower hole mobility than that of electrons. The device was repeatable and stable for up to 40 days with ~7% variation in response. Hence, the proposed sensor provides a simple solution for selective Hg (II) ion sensing, challenging its complex conventional counterparts.
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基于RGO-MoS 2纳米结聚集体的柔性汞离子传感器
在这项研究中,我们展示了还原氧化石墨烯(RGO) -二硫化钼(MoS2)纳米结聚落在柔性交叉电极(IDEs)上作为Hg (II)离子传感器用于水质监测的制备。制备的器件对溶液中不同浓度(3 ~ 12 ppb)的Hg (II)离子具有选择性灵敏度,对12 ppb的Hg (II)离子的最大响应为97%(响应时间为4 s),灵敏度为2.2%/ppb(检测限:1 ppb)。通过增加弯曲角度(15°-90°)来测试弯曲应力对设备的影响。它们对拟合模型支持的弯曲反应最小(最大变化约2%)。该装置的传感性能通过连接依赖机制和支持该机制的模型来解释。最后,通过检查n, p和结区的影响,分析确定了整体器件响应。在12 ppb下,分析模型预测的96%几乎与实验测量值(97%)相似。分析模型预测了n型(MoS2)和RGO-MoS2 (pn)结的显著响应依赖。p型区域对整体传感性能的响应较小,这可能是由于空穴迁移率低于电子迁移率。该装置可重复且稳定达40天,响应变化约7%。因此,所提出的传感器为选择性Hg (II)离子传感提供了一个简单的解决方案,挑战了其复杂的传统对口物。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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