{"title":"Thinking MOSFETs","authors":"Tom Jackson","doi":"10.1109/TED.2025.3526127","DOIUrl":null,"url":null,"abstract":"The equations typically taught and used to estimate the threshold voltage for MOSFETs, based on the band bending in the MOSFET channel, are simple and easy to develop. However, they work well only for a subset of MOSFET types that do not include the MOSFETs of greatest interest today, including finFETs, nanosheet FETs, and most thin-film transistors (TFTs). This note provides an alternative, where threshold voltage is understood as moving the Fermi level to near the relevant band edge (conduction band minimum for n-channel MOSFETs or valence band maximum for p-channel MOSFETs).","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1520-1522"},"PeriodicalIF":3.2000,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10879115/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract
The equations typically taught and used to estimate the threshold voltage for MOSFETs, based on the band bending in the MOSFET channel, are simple and easy to develop. However, they work well only for a subset of MOSFET types that do not include the MOSFETs of greatest interest today, including finFETs, nanosheet FETs, and most thin-film transistors (TFTs). This note provides an alternative, where threshold voltage is understood as moving the Fermi level to near the relevant band edge (conduction band minimum for n-channel MOSFETs or valence band maximum for p-channel MOSFETs).
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IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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