Justin P. Heimerl;Harrison P. Lee;Christoph Jungemann;John D. Cressler
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引用次数: 0
Abstract
We numerically investigate a new asymmetric superjunction (SJ) collector profile implemented in the context of high-speed 90-nm silicon-germanium heterojunction bipolar transistors (SiGe HBTs). After reviewing past results on vertical SJ SiGe HBT collector design, we present a new SJ profile, which was generated using Bayesian optimization techniques. This new design provides improvements over both a standard collector profile and a standard SJ profile. The new profile provides a substantial increase in maximum cutoff frequency (${f}_{T}$ ), with a slight increase in open-base-collector–emitter breakdown voltage ($\text {BV}_{\text {CEO}}$ ). Then, we demonstrate, via hydrodynamic (HD) simulations and numerically solving the Boltzmann transport equation (BTE), that the simulated results are physically grounded. Finally, we address control and manufacturing concerns.
期刊介绍：
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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