Coexistence of memristive and memcapacitive characteristics in Pt/MgO/ZnO metal-insulator-semiconductor heterostructure device

Abstract

Coexistence of memristive and memcapacitive behaviors is demonstrated in the designed Pt/MgO/ZnO metal-insulator-semiconductor (MIS) heterostructure device. It will form the depletion region/barrier region/junction region in MgO/ZnO interface for the MIS heterostructure device. The external electric field induces the migration of the oxygen ion between MgO and ZnO layer. It can effectively change the oxygen vacancy concentration of junction region, modulating junction region width/high, further affecting device conductivity and capacitance, realizing memristive and memcapacitive characteristics. Meanwhile, several essential synaptic functions have been imitated using this MIS heterostructure memory device, including nonlinear transmission characteristics, spike-timing-dependent plasticity (STDP) long-term/short-term plasticity (LSP and STP) and “learning-experience” behaviors.