How are Heterogeneous Nucleation Rate Observations Influenced by Instrument Resolution?

IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY ACS Applied Materials & Interfaces Pub Date : 2025-03-10 DOI:10.1021/acsami.4c20181
Jiahui You, Ke Yuan, Nikhil Rampal, Andrew G Stack, Vitalii Starchenko
{"title":"How are Heterogeneous Nucleation Rate Observations Influenced by Instrument Resolution?","authors":"Jiahui You, Ke Yuan, Nikhil Rampal, Andrew G Stack, Vitalii Starchenko","doi":"10.1021/acsami.4c20181","DOIUrl":null,"url":null,"abstract":"<p><p>Experimental measurements of the heterogeneous nucleation rate rely on counting the number of nuclei with time. However, the size of a thermodynamically stable nucleus is often a few nanometers in diameter and is below the resolution of most (in situ) measurement techniques that provide a statistically valid sample. Due to the finite resolution of the instruments and analysis methods, it is challenging to capture the incipient nuclei and the subsequent evolution of nuclei density over time. In this work, we demonstrate the impact of instrument resolution on observed nuclei densities by comparing numerical modeling with experimental results. To achieve this, we implemented heterogeneous nucleation within the pore-scale reactive transport modeling framework using classical nucleation theory (CNT). We compared the modeling results with nucleation rates measured using X-ray nanotomography (XnT) and evaluated how these impact the apparent values of the prefactor and interfacial energy based on CNT and the crystal growth rate. Specifically, we applied a resolution threshold (artificial resolution limit) in the model during nuclei counting to resemble an experimental resolution, ranging from 15 to 500 nm. The findings reveal that the instrument resolution significantly impacts the apparent prefactor and interfacial energy. Both apparent prefactor and interfacial energy decrease with a decrease in the instrument resolution. While deviation in the prefactor due to resolution is anticipated, those in the interfacial energy are unexpected. The approach described here allows one to correct apparent nucleation rates that depend on the instrument's resolution to derive \"intrinsic\" CNT parameters for the prefactor and interfacial energy.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":""},"PeriodicalIF":8.3000,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsami.4c20181","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Experimental measurements of the heterogeneous nucleation rate rely on counting the number of nuclei with time. However, the size of a thermodynamically stable nucleus is often a few nanometers in diameter and is below the resolution of most (in situ) measurement techniques that provide a statistically valid sample. Due to the finite resolution of the instruments and analysis methods, it is challenging to capture the incipient nuclei and the subsequent evolution of nuclei density over time. In this work, we demonstrate the impact of instrument resolution on observed nuclei densities by comparing numerical modeling with experimental results. To achieve this, we implemented heterogeneous nucleation within the pore-scale reactive transport modeling framework using classical nucleation theory (CNT). We compared the modeling results with nucleation rates measured using X-ray nanotomography (XnT) and evaluated how these impact the apparent values of the prefactor and interfacial energy based on CNT and the crystal growth rate. Specifically, we applied a resolution threshold (artificial resolution limit) in the model during nuclei counting to resemble an experimental resolution, ranging from 15 to 500 nm. The findings reveal that the instrument resolution significantly impacts the apparent prefactor and interfacial energy. Both apparent prefactor and interfacial energy decrease with a decrease in the instrument resolution. While deviation in the prefactor due to resolution is anticipated, those in the interfacial energy are unexpected. The approach described here allows one to correct apparent nucleation rates that depend on the instrument's resolution to derive "intrinsic" CNT parameters for the prefactor and interfacial energy.

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
求助全文
约1分钟内获得全文 去求助
来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
期刊最新文献
Bioabsorbable Stent-Covering with Sustained Anticoagulant Activity Fabricated via Alternate Layer-by-Layer Self-Assembly of Heparin and Silk Fibroin Parallelized Droplet Vitrification for Single-Run Vitrification of Hepatocytes from an Entire Rat Liver In Situ Electrochemical Activation Strategy toward Organic Cation Preintercalated Layered Vanadium-Based Oxide Cathode for High-Performance Aqueous Zinc-Ion Batteries Influence of Surface Chemistry and Nanomechanical Properties of Methacrylate-Based Copolymer Thin Films on Keratocyte Cell Adhesion Contact Resistance Optimization in MoS2 Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1