{"title":"Quantum Wells in Magnesium-Manganese Bimetallic Antiperovskites for High Luminescence.","authors":"Yangyang Cai, Siyu Yan, Yue-Jian Lin, Tingting Lin, Longzhen Qiu, Xiaoyong Pan, Weizhi Wang","doi":"10.1021/acsami.4c18047","DOIUrl":null,"url":null,"abstract":"<p><p>Perovskite has attracted extensive attention in the realm of photovoltaic and light-emitting diodes (LEDs) on account of its outstanding photoelectric properties. Perovskite-type quantum wells (QW) have been developed for high-efficiency perovskite-type LEDs. However, there are few reports on the in situ quantum well structure formed by a bimetallic antiperovskite and its properties. In this work, we report a double/bimetallic antiperovskite composed of magnesium and manganese. It is an in situ homogeneous junction composed of a p-type manganese well layer and an n-type magnesium barrier layer, which promotes the recombination of carriers and increases the luminous efficiency. The in situ quantum wells enable the green antiperovskite LED to have a maximum external quantum efficiency reaching 20.2% and a maximum luminance as high as 19000 cd m<sup>-2</sup>. These research results provide the chance to produce high-performance LEDs based on an in situ quantum well structure. Meanwhile, the strategy developed in this work is helpful for the design of other highly luminescent lead-free materials.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":""},"PeriodicalIF":8.3000,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsami.4c18047","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Perovskite has attracted extensive attention in the realm of photovoltaic and light-emitting diodes (LEDs) on account of its outstanding photoelectric properties. Perovskite-type quantum wells (QW) have been developed for high-efficiency perovskite-type LEDs. However, there are few reports on the in situ quantum well structure formed by a bimetallic antiperovskite and its properties. In this work, we report a double/bimetallic antiperovskite composed of magnesium and manganese. It is an in situ homogeneous junction composed of a p-type manganese well layer and an n-type magnesium barrier layer, which promotes the recombination of carriers and increases the luminous efficiency. The in situ quantum wells enable the green antiperovskite LED to have a maximum external quantum efficiency reaching 20.2% and a maximum luminance as high as 19000 cd m-2. These research results provide the chance to produce high-performance LEDs based on an in situ quantum well structure. Meanwhile, the strategy developed in this work is helpful for the design of other highly luminescent lead-free materials.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.