Electric-Field Switchable Chirality in Rhombohedral Graphene Chern Insulators Stabilized by Tungsten Diselenide

IF 15.7 1区 物理与天体物理 Q1 PHYSICS, MULTIDISCIPLINARY Physical Review X Pub Date : 2025-03-10 DOI:10.1103/physrevx.15.011052
Jing Ding, Hanxiao Xiang, Jiannan Hua, Wenqiang Zhou, Naitian Liu, Le Zhang, Na Xin, Bing Wu, Kenji Watanabe, Takashi Taniguchi, Zdeněk Sofer, Wei Zhu, Shuigang Xu
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Abstract

Chern insulators host topologically protected chiral edge currents with quantized conductance characterized by their Chern number. Switching the chirality of a Chern insulator, namely, the direction of the edge current, is highly challenging due to topologically forbidden backscattering but is of considerable importance for the design of topological devices. Nevertheless, this can be achieved by reversing the sign of the Chern number. Here, we report electrically switchable chirality in rhombohedral multilayer graphene-based Chern insulators through a topological phase transition. By introducing moiré superlattices in rhombohedral heptalayer graphene, we observe a cascade of topological phase transitions at quarter electron filling of a moiré band with the Chern number tunable from −1, 1, to 2. Furthermore, integrating monolayer tungsten diselenide at the moiréless interface of rhombohedral decalayer graphene and hexagonal boron nitride superlattices stabilizes the Chern insulators, enabling quantized anomalous Hall resistance of h/2e2. Remarkably, the Chern number can be electrically switched using displacement fields, leading to a topological phase transition from 1 to 2. Our work establishes rhombohedral multilayer graphene moiré superlattices as a versatile platform for topological engineering, with switchable chirality offering significant promise for integrating chiral edge currents into topological electronic circuits. Published by the American Physical Society 2025
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二硒化钨稳定的罗波面体石墨烯ern绝缘体中的电场可切换手性
陈氏绝缘子具有拓扑保护的手性边缘电流,其电导量子化由其陈氏数表征。切换Chern绝缘体的手性,即边缘电流的方向,由于拓扑上禁止后向散射,是极具挑战性的,但对于拓扑器件的设计是相当重要的。然而,这可以通过反转陈氏数的符号来实现。在这里,我们报告了通过拓扑相变在菱形多层石墨烯基陈氏绝缘体中的电可切换手性。通过在菱形七层石墨烯中引入莫尔晶格,我们观察到在四分之一电子填充莫尔晶格带时的级联拓扑相变,其陈氏数可从- 1,1到2调节。此外,将单层二硒化钨集成在菱形脱碳层石墨烯和六方氮化硼超晶格的莫氏界面上,稳定了陈氏绝缘体,实现了h/2e2的量子化异常霍尔电阻。值得注意的是,陈恩数可以使用位移场进行电开关,从而导致拓扑相变从−1到2。我们的工作建立了菱形多层石墨烯波纹超晶格作为拓扑工程的通用平台,具有可切换的手性,为将手性边缘电流集成到拓扑电子电路中提供了重要的希望。2025年由美国物理学会出版
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来源期刊
Physical Review X
Physical Review X PHYSICS, MULTIDISCIPLINARY-
CiteScore
24.60
自引率
1.60%
发文量
197
审稿时长
3 months
期刊介绍: Physical Review X (PRX) stands as an exclusively online, fully open-access journal, emphasizing innovation, quality, and enduring impact in the scientific content it disseminates. Devoted to showcasing a curated selection of papers from pure, applied, and interdisciplinary physics, PRX aims to feature work with the potential to shape current and future research while leaving a lasting and profound impact in their respective fields. Encompassing the entire spectrum of physics subject areas, PRX places a special focus on groundbreaking interdisciplinary research with broad-reaching influence.
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