Fully Solution-Processed Flexible and Self-Rectifying Memristor for Synapse Emulation

Abstract

Self-rectifying organic memristors with integrated biosynaptic functionalities show significant potential for enabling high-density neuromorphic networks by inherently suppressing stealth current effects. In this study, we present a fully solution-processed PEDOT:PSS-based memristor that combines resistive switching and self-rectifying properties. The device features spin-coated PEDOT:PSS as both the top and the bottom electrodes. To enhance the conductivity of the PEDOT:PSS film, ethylene glycol was added to the spin-coating solution, followed by sequential methanol cleaning. The functionalities are achieved through enhancing the redox activity of PEDOT and the transformation of the ionic PSS within the hybrid film. The inclusion of ZnO nanoparticles (ZnO NPs) significantly enhances device performance, resulting in a higher on/off current ratio and sophisticated synaptic behaviors, including transitions from short- to long-term plasticity and improved linear potentiation and depression. This work underscores the potential of solution-processed PEDOT-metal oxide hybrid systems as a foundation for advancing neuromorphic computing architectures.