Interface-Induced Conventional and Inverse Magnetocaloric Properties of GdFeCo Thin Films

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2025-02-17 DOI:10.1021/acsaelm.4c02066
Lisha Gu, Jagadish Kumar Galivarapu, Zhiwen Wang and Ke Wang*, 
{"title":"Interface-Induced Conventional and Inverse Magnetocaloric Properties of GdFeCo Thin Films","authors":"Lisha Gu,&nbsp;Jagadish Kumar Galivarapu,&nbsp;Zhiwen Wang and Ke Wang*,&nbsp;","doi":"10.1021/acsaelm.4c02066","DOIUrl":null,"url":null,"abstract":"<p >A transformation from conventional to enhanced inverse magnetocaloric effect is being investigated in ferrimagnetic Gd<sub>35</sub>Fe<sub>5</sub>Co<sub>60</sub> thin films at a lower temperature than the magnetic ordering temperature. RF magnetron sputtering is utilized to deposit 80 nm GdFeCo thin film sandwiched between Pt or Ta layers (Pt/GdFeCo/Pt and Ta/GdFeCo/Ta) on a Si (100) substrate to achieve optimal interfacial effects. A significant change in magnetic compensation temperatures (<i>T</i><sub>comp</sub>) and magnetic ordering is noticed. <i>T</i><sub>comp</sub> observed at 324.1 K for the Pt structure rises to 389.7 K for the Ta structure. The ferrimagnetic to paramagnetic phase transition, Curie temperature (<i>T</i><sub>c</sub>), is found at 586.8 and 664.3 K for Pt and Ta structures, respectively. The isothermal entropy change (Δ<i>S</i><sub>M</sub>) is estimated by applying 15 kOe in a wide temperature range (100 K &lt; <i>T</i> &lt; 750 K). The Pt structure shows maximum conventional and inverse magnetocaloric entropy changes (Δ<i>S</i><sub>M</sub>) of 1.09 and 0.78 J/kg K, respectively. The Ta structure transforms from conventional to inverse magnetocaloric entropy change with a maximum of 1.08 J/kg K at 15 kOe, which is higher than many thin films reported. These findings not only provide a deeper understanding of the interplay between interface interactions and magnetic dynamics but are also helpful in designing multilayered structures with enhanced magnetocaloric properties.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1812–1819 1812–1819"},"PeriodicalIF":4.7000,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.4c02066","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

A transformation from conventional to enhanced inverse magnetocaloric effect is being investigated in ferrimagnetic Gd35Fe5Co60 thin films at a lower temperature than the magnetic ordering temperature. RF magnetron sputtering is utilized to deposit 80 nm GdFeCo thin film sandwiched between Pt or Ta layers (Pt/GdFeCo/Pt and Ta/GdFeCo/Ta) on a Si (100) substrate to achieve optimal interfacial effects. A significant change in magnetic compensation temperatures (Tcomp) and magnetic ordering is noticed. Tcomp observed at 324.1 K for the Pt structure rises to 389.7 K for the Ta structure. The ferrimagnetic to paramagnetic phase transition, Curie temperature (Tc), is found at 586.8 and 664.3 K for Pt and Ta structures, respectively. The isothermal entropy change (ΔSM) is estimated by applying 15 kOe in a wide temperature range (100 K < T < 750 K). The Pt structure shows maximum conventional and inverse magnetocaloric entropy changes (ΔSM) of 1.09 and 0.78 J/kg K, respectively. The Ta structure transforms from conventional to inverse magnetocaloric entropy change with a maximum of 1.08 J/kg K at 15 kOe, which is higher than many thin films reported. These findings not only provide a deeper understanding of the interplay between interface interactions and magnetic dynamics but are also helpful in designing multilayered structures with enhanced magnetocaloric properties.

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界面诱导的GdFeCo薄膜的常规和逆磁热性能
本文研究了Gd35Fe5Co60铁磁薄膜在低于磁有序温度下从传统磁热效应到增强的逆磁热效应的转变。利用射频磁控溅射技术在Si(100)衬底上沉积了夹在Pt或Ta层(Pt/GdFeCo/Pt和Ta/GdFeCo/Ta)之间的80 nm GdFeCo薄膜,以获得最佳的界面效果。磁补偿温度(Tcomp)和磁有序度发生了显著变化。Pt结构的Tcomp在324.1 K时升高到389.7 K。在586.8 K和664.3 K时,Pt和Ta结构的居里温度(Tc)分别发生了铁磁到顺磁的相变。等温熵变(ΔSM)是通过在宽温度范围(100 K <;T & lt;Pt结构的最大常规和逆磁热熵变化(ΔSM)分别为1.09和0.78 J/kg K。Ta结构由传统的磁热熵变化转变为逆磁热熵变化,在15 kOe时最大为1.08 J/kg K,高于许多薄膜的报道。这些发现不仅对界面相互作用和磁动力学之间的相互作用提供了更深入的理解,而且对设计具有增强磁热学性能的多层结构也有帮助。
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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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