AlGaN/GaN High electron Mobility Transistor (HEMT) based radio frequency power amplifiers for future wireless communication transmitters: Exciting prospects and challenges

IF 2.6 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronic Engineering Pub Date : 2025-03-10 DOI:10.1016/j.mee.2025.112342
J. Ajayan , S. Sreejith
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Abstract

The power amplifiers (PAs) are indispensable for maintaining that both space and terrestrial transmitters fulfill the rigorous requirements for power consumption and, consequently, efficiency. Since solid-state PAs based on GaN HEMTs may offer the efficiency and power density performance to make them a feasible choice for space-borne active antennas, their availability is what propels integration for the satellite transmitters. Gain, output power (Pout), bandwidth (BW), drain efficiency (DE), chip area, peak-to-average-power ratio (PAPR) and power added efficiency (PAE) are the key metrics usually used for measuring the performance of PAs. This article deals with the exciting prospects and challenges in the design and manufacturing of GaN-HEMT based RF-PAs. Doherty PAs are most popular among various PA architectures and they have recorded a maximum gain of over 30 dB, PAPR of over 11.5, PAE of over 81 % and an operating frequency of over 29 GHz. Other GaN HEMT based PAs have been reported a maximum operating frequency of over 192 GHz (using 100 nm GaN HEMT), gain of over 35 dB, and a Pout of over 282 W. This article also highlights the various techniques for enhancing the broadband operation of GaN HEMT based PAs.
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来源期刊
Microelectronic Engineering
Microelectronic Engineering 工程技术-工程:电子与电气
CiteScore
5.30
自引率
4.30%
发文量
131
审稿时长
29 days
期刊介绍: Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
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