{"title":"Logic and static memory functions of an inverter comprising a feedback field effect transistor.","authors":"Daon Kim, Doohyeok Lim","doi":"10.1088/1361-6528/adbf27","DOIUrl":null,"url":null,"abstract":"<p><p>The von Neumann architecture used as the basic operating principle in computers has a bottleneck owing to the disparity between the central processing unit and memory access speeds, which leads to high power consumption and speed reduction, reducing the overall system performance. However, feedback field-effect transistors (FBFETs) have attracted significant attention owing to their potential to realize next-generation electronic devices based on their switching characteristics. Therefore, in this study, we configured the logic and static memory functions of an inverter comprising a pull-up resistor and an n-channel feedback field-effect transistor using a mixed-mode simulation. The FBFET has a p-n-p-n structure with a gated p-region on the silicon-on-insulator, where each channel length is 30 nm. These modes can have an on/off current ratio of ~ 10^11 and a subthreshold swing (SS) of less than 5.4 mV/dec. The proposed device can perform logic operations and static memory functions, exhibiting excellent memory functions such as fast write, long hold, and non-destructive read operations. In addition, the inverter operation exhibits nanosecond-level speed and the ability to maintain non-destructive read functionality for over 100 s. The proposed n-FBFET-based inverter is expected to be a promising technology for future high-speed, low-power logic memory applications.
.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/adbf27","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The von Neumann architecture used as the basic operating principle in computers has a bottleneck owing to the disparity between the central processing unit and memory access speeds, which leads to high power consumption and speed reduction, reducing the overall system performance. However, feedback field-effect transistors (FBFETs) have attracted significant attention owing to their potential to realize next-generation electronic devices based on their switching characteristics. Therefore, in this study, we configured the logic and static memory functions of an inverter comprising a pull-up resistor and an n-channel feedback field-effect transistor using a mixed-mode simulation. The FBFET has a p-n-p-n structure with a gated p-region on the silicon-on-insulator, where each channel length is 30 nm. These modes can have an on/off current ratio of ~ 10^11 and a subthreshold swing (SS) of less than 5.4 mV/dec. The proposed device can perform logic operations and static memory functions, exhibiting excellent memory functions such as fast write, long hold, and non-destructive read operations. In addition, the inverter operation exhibits nanosecond-level speed and the ability to maintain non-destructive read functionality for over 100 s. The proposed n-FBFET-based inverter is expected to be a promising technology for future high-speed, low-power logic memory applications.
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期刊介绍:
The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.