Yingli Zhang, Haopeng Du, Dirui Wu, Jinxin Ge, Jiahao Song, Mengkang Xu, Qingjiao Huang, Jiangyu Li, Changjian Li
{"title":"Enhancing room temperature electron mobility at high carrier concentration in transparent BaSnO3/La:BaSnO3/BaSnO3 heterostructures","authors":"Yingli Zhang, Haopeng Du, Dirui Wu, Jinxin Ge, Jiahao Song, Mengkang Xu, Qingjiao Huang, Jiangyu Li, Changjian Li","doi":"10.1016/j.jmat.2025.101054","DOIUrl":null,"url":null,"abstract":"Transparent conducting oxides are increasingly important for optoelectronic and thin film transistor applications. La doped BaSnO<sub>3</sub> is a strong candidate for its high transparency, high carrier concentration, high mobility and abundancy. However, due to the lack of lattice-matched substrates, the mobility of La:BaSnO<sub>3</sub> remains inferior to single crystals. Here, by constructing a novel approach via delta doping La:BaSnO<sub>3</sub> in a BaSnO<sub>3</sub>/La:BaSnO<sub>3</sub>/BaSnO<sub>3</sub> (BSO/LBSO/BSO) heterostructure, we achieved room temperature mobility enhancement up to 110 cm<sup>2</sup>⸱V<sup>–1</sup>⸱s<sup>–1</sup> while keeping the high carrier concentration at 5×10<sup>20</sup> cm<sup>–3</sup>, reaching to the highest electrical conductivity in BaSnO<sub>3</sub> based systems. The mobility is enhanced more than 100% compared to our La:BaSnO<sub>3</sub> films, which is among the highest mobility in BaSnO<sub>3</sub> based films and heterostructures. From atomic structural investigations, we found that both (1) the carrier confinement due to delta doping and (2) dislocation-free La:BaSnO<sub>3</sub> conducting channel, revealed by atomic resolution scanning transmission electron microscopy (STEM) studies, are responsible for mobility enhancement. The enhanced mobility from heterostructure approach is widely applicable for transparent electrodes and high current thin film transistor applications.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"7 1","pages":""},"PeriodicalIF":8.4000,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materiomics","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.jmat.2025.101054","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Transparent conducting oxides are increasingly important for optoelectronic and thin film transistor applications. La doped BaSnO3 is a strong candidate for its high transparency, high carrier concentration, high mobility and abundancy. However, due to the lack of lattice-matched substrates, the mobility of La:BaSnO3 remains inferior to single crystals. Here, by constructing a novel approach via delta doping La:BaSnO3 in a BaSnO3/La:BaSnO3/BaSnO3 (BSO/LBSO/BSO) heterostructure, we achieved room temperature mobility enhancement up to 110 cm2⸱V–1⸱s–1 while keeping the high carrier concentration at 5×1020 cm–3, reaching to the highest electrical conductivity in BaSnO3 based systems. The mobility is enhanced more than 100% compared to our La:BaSnO3 films, which is among the highest mobility in BaSnO3 based films and heterostructures. From atomic structural investigations, we found that both (1) the carrier confinement due to delta doping and (2) dislocation-free La:BaSnO3 conducting channel, revealed by atomic resolution scanning transmission electron microscopy (STEM) studies, are responsible for mobility enhancement. The enhanced mobility from heterostructure approach is widely applicable for transparent electrodes and high current thin film transistor applications.
期刊介绍:
The Journal of Materiomics is a peer-reviewed open-access journal that aims to serve as a forum for the continuous dissemination of research within the field of materials science. It particularly emphasizes systematic studies on the relationships between composition, processing, structure, property, and performance of advanced materials. The journal is supported by the Chinese Ceramic Society and is indexed in SCIE and Scopus. It is commonly referred to as J Materiomics.