Sb2Te3-based thermoelectric (TE) thin-film generators are an attractive option for wearable electronics. Band engineering can effectively modulate TE performance. However, modulating the band structure of Sb2Te3 thin film remains a challenging task. In this work, titanium (Ti) doping effectively modifies the electronic band structure in Sb2Te3, optimizing both carrier transport and phonon transport performance. Ti-doping optimizes carrier concentration and resulting in an increase in electrical conductivity from 1420.0 S/cm to 1694.8 S/cm at 300 K. Additionally, Ti doping modulates the balance between the effective mass of charge carriers and carrier concentration, increasing Seebeck coefficient from 106.0 μV/K to 114.8 μV/K. Both enhancements lead to a peak power factor of 20.9 μW·cm–1·K–2. Moreover, Ti-induced vibrational modes have reduced the lattice thermal conductivity from 0.62 W·m–1·K–1 to 0.22 W·m–1·K–1, improving zT from 0.33 to 0.52 at 300 K. The films exhibit excellent flexibility, with an ultralow resistance change ratio (ΔR/R0) of less than 7% after 1000 cycles at a 6 mm bending radius. The device achieves a maximum output power of 178.8 nW with a temperature gradient of 30 K in agreement with the finite element analysis, indicating significant potential for wearable electronics.
{"title":"Electronic state reconstruction enabling high thermoelectric performance in Ti doped Sb2Te3 flexible thin films","authors":"Dong Yang, Bo Wu, Mazhar Hussain Danish, Fu Li, Yue-Xing Chen, Hongli Ma, Guangxing Liang, Xianghua Zhang, Jean-François Halet, Jingting Luo, Dongwei Ao, Zhuang-Hao Zheng","doi":"10.1016/j.jmat.2025.101028","DOIUrl":"https://doi.org/10.1016/j.jmat.2025.101028","url":null,"abstract":"Sb<sub>2</sub>Te<sub>3</sub>-based thermoelectric (TE) thin-film generators are an attractive option for wearable electronics. Band engineering can effectively modulate TE performance. However, modulating the band structure of Sb<sub>2</sub>Te<sub>3</sub> thin film remains a challenging task. In this work, titanium (Ti) doping effectively modifies the electronic band structure in Sb<sub>2</sub>Te<sub>3</sub>, optimizing both carrier transport and phonon transport performance. Ti-doping optimizes carrier concentration and resulting in an increase in electrical conductivity from 1420.0 S/cm to 1694.8 S/cm at 300 K. Additionally, Ti doping modulates the balance between the effective mass of charge carriers and carrier concentration, increasing Seebeck coefficient from 106.0 μV/K to 114.8 μV/K. Both enhancements lead to a peak power factor of 20.9 μW·cm<sup>–1</sup>·K<sup>–2</sup>. Moreover, Ti-induced vibrational modes have reduced the lattice thermal conductivity from 0.62 W·m<sup>–1</sup>·K<sup>–1</sup> to 0.22 W·m<sup>–1</sup>·K<sup>–1</sup>, improving <em>zT</em> from 0.33 to 0.52 at 300 K. The films exhibit excellent flexibility, with an ultralow resistance change ratio (<em>ΔR</em>/<em>R</em><sub>0</sub>) of less than 7% after 1000 cycles at a 6 mm bending radius. The device achieves a maximum output power of 178.8 nW with a temperature gradient of 30 K in agreement with the finite element analysis, indicating significant potential for wearable electronics.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"52 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143049732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-27DOI: 10.1016/j.jmat.2025.101030
Erin L. Carroll , James H. Killeen , Antonio Feteira , Julian S. Dean , Derek C. Sinclair
{"title":"Editor corrections to “Influence of electrode contact arrangements on polarisation-electric field measurements of ferroelectric ceramics: A case study of BaTiO3” [J Materiomics 11 (2025) 100939]","authors":"Erin L. Carroll , James H. Killeen , Antonio Feteira , Julian S. Dean , Derek C. Sinclair","doi":"10.1016/j.jmat.2025.101030","DOIUrl":"10.1016/j.jmat.2025.101030","url":null,"abstract":"","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 4","pages":"Article 101030"},"PeriodicalIF":8.4,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143044530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-14DOI: 10.1016/j.jmat.2025.101015
Kun Yang , Hyun Woo Jeong , Jaewook Lee , Yong Hyeon Cho , Ju Yong Park , Hyojun Choi , Young Yong Kim , Younghwan Lee , Yunseok Kim , Min Hyuk Park
This study proposes a novel approach to achieving highly reliable, low-voltage polarization switching of ferroelectric Hf0.5Zr0.5O2 (HZO) thin films using polymorph- and orientation-controlled W electrodes ((111)-textured α-W and (200)-textured β-W) by adjusting the sputtering conditions. We demonstrated the formation of (111) and (002)/(020)-textured HZO films on the (111)-textured α-W and (200)-textured β-W electrodes, respectively. Under a low-voltage pulse of 1.2 V (1.5 MV/cm), α-W/HZO/α-W and β-W/HZO/β-W capacitors exhibited double-remanent polarization (2Pr) values of 29.23 μC/cm2 and 25.16 μC/cm2, which were higher than that of the TiN/HZO/TiN capacitor by 33% and 14%, respectively, and a high endurance of 109 cycles without hard-breakdown. The differences in the ferroelectric properties and switching kinetics were understood based on the polymorphism and texture of the HZO films influenced by electrode materials.
本研究提出了一种新的方法，通过调整溅射条件，利用多晶和取向控制的W电极(（111)-织构α-W和(200)-织构β-W）实现铁电Hf0.5Zr0.5O2 （HZO）薄膜高可靠的低压极化开关。我们分别在（111）织构α-W和（200）织构β-W电极上形成了（111）和(002)/(020)织构的HZO薄膜。在1.2 V （1.5 MV/cm）低压脉冲下，α-W/HZO/α-W和β-W/HZO/β-W电容器的双剩余极化（2Pr）值分别为29.23 μC/cm2和25.16 μC/cm2，分别比TiN/HZO/TiN电容器高33%和14%，且具有109次循环而不发生硬击穿的高耐久性。基于电极材料对HZO薄膜的多态和织构的影响，了解了其铁电性质和开关动力学的差异。
{"title":"Texture modulation of ferroelectric Hf0.5Zr0.5O2 thin films by engineering the polymorphism and texture of tungsten electrodes","authors":"Kun Yang , Hyun Woo Jeong , Jaewook Lee , Yong Hyeon Cho , Ju Yong Park , Hyojun Choi , Young Yong Kim , Younghwan Lee , Yunseok Kim , Min Hyuk Park","doi":"10.1016/j.jmat.2025.101015","DOIUrl":"10.1016/j.jmat.2025.101015","url":null,"abstract":"<div><div>This study proposes a novel approach to achieving highly reliable, low-voltage polarization switching of ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) thin films using polymorph- and orientation-controlled W electrodes ((111)-textured α-W and (200)-textured β-W) by adjusting the sputtering conditions. We demonstrated the formation of (111) and (002)/(020)-textured HZO films on the (111)-textured α-W and (200)-textured β-W electrodes, respectively. Under a low-voltage pulse of 1.2 V (1.5 MV/cm), α-W/HZO/α-W and β-W/HZO/β-W capacitors exhibited double-remanent polarization (2<em>P</em><sub>r</sub>) values of 29.23 μC/cm<sup>2</sup> and 25.16 μC/cm<sup>2</sup>, which were higher than that of the TiN/HZO/TiN capacitor by 33% and 14%, respectively, and a high endurance of 10<sup>9</sup> cycles without hard-breakdown. The differences in the ferroelectric properties and switching kinetics were understood based on the polymorphism and texture of the HZO films influenced by electrode materials.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 4","pages":"Article 101015"},"PeriodicalIF":8.4,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142975381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-10DOI: 10.1016/j.jmat.2025.101016
Yuchen Wang, Jiachen Li, Hansheng Zhu, Haifeng Bu, Xinzhe Du, Shengchun Shen, Yuewei Yin, Xiaoguang Li
The superior dielectric and ferroelectric properties of HfO2-based thin films, coupled with excellent silicon compatibility, position them as highly attractive candidates for dynamic and ferroelectric random-access memories (DRAM and FeRAM). However, simultaneously achieving high dielectric constant (κ) and strong ferroelectricity in HfO2-based films presents a challenge, as high-κ and ferroelectricity are associated with the tetragonal and orthorhombic phases, respectively. In this study, we report both the good ferroelectric and dielectric properties obtained in W/Hf0.5Zr0.5O2 (HZO ∼6.5 nm)/W with morphotropic phase boundary structure by optimizing stacking sequence of HfO2 and ZrO2 sublayers. Notably, by alternating stacking of 1-cycle HfO2 with 1-cycle ZrO2 sublayers ((1–HfO2)/(1–ZrO2)), high-κ (>50) and large polarization (2Pr >40 μC/cm2, after wake-up) can be achieved. Besides, the (1–HfO2)/(1–ZrO2) stacking configuration presents better thermal stability compared to other stacking sequences. Furthermore, the incorporation of an Al2O3 layer leads to a low leakage current density (<10–7 A/cm2 at 0.65 V) and high dielectric endurance over 1013 cycles (operating voltage ∼0.5 V). A low equivalent oxide thickness (EOT ∼0.53 nm) and considerable polarization with low leakage are simultaneously achieved. These results highlight the potential of HfO2-based films with optimized structural stacking as a trade-off approach for integrating DRAM and FeRAM on one-chip.
{"title":"Simultaneously achieving high-κ and strong ferroelectricity in Hf0.5Zr0.5O2 thin film by structural stacking design","authors":"Yuchen Wang, Jiachen Li, Hansheng Zhu, Haifeng Bu, Xinzhe Du, Shengchun Shen, Yuewei Yin, Xiaoguang Li","doi":"10.1016/j.jmat.2025.101016","DOIUrl":"https://doi.org/10.1016/j.jmat.2025.101016","url":null,"abstract":"The superior dielectric and ferroelectric properties of HfO<sub>2</sub>-based thin films, coupled with excellent silicon compatibility, position them as highly attractive candidates for dynamic and ferroelectric random-access memories (DRAM and FeRAM). However, simultaneously achieving high dielectric constant (<em>κ</em>) and strong ferroelectricity in HfO<sub>2</sub>-based films presents a challenge, as high-<em>κ</em> and ferroelectricity are associated with the tetragonal and orthorhombic phases, respectively. In this study, we report both the good ferroelectric and dielectric properties obtained in W/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO ∼6.5 nm)/W with morphotropic phase boundary structure by optimizing stacking sequence of HfO<sub>2</sub> and ZrO<sub>2</sub> sublayers. Notably, by alternating stacking of 1-cycle HfO<sub>2</sub> with 1-cycle ZrO<sub>2</sub> sublayers ((1–HfO<sub>2</sub>)/(1–ZrO<sub>2</sub>)), high-<em>κ</em> (>50) and large polarization (2<em>P</em><sub>r</sub> >40 μC/cm<sup>2</sup>, after wake-up) can be achieved. Besides, the (1–HfO<sub>2</sub>)/(1–ZrO<sub>2</sub>) stacking configuration presents better thermal stability compared to other stacking sequences. Furthermore, the incorporation of an Al<sub>2</sub>O<sub>3</sub> layer leads to a low leakage current density (<10<sup>–7</sup> A/cm<sup>2</sup> at 0.65 V) and high dielectric endurance over 10<sup>13</sup> cycles (operating voltage ∼0.5 V). A low equivalent oxide thickness (EOT ∼0.53 nm) and considerable polarization with low leakage are simultaneously achieved. These results highlight the potential of HfO<sub>2</sub>-based films with optimized structural stacking as a trade-off approach for integrating DRAM and FeRAM on one-chip.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"25 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-08DOI: 10.1016/j.jmat.2025.101014
Lyubov Gimadeeva , Andrei Ushakov , Alexey Pugachev , Anton Turygin , Ruiyi Jing , Qingyuan Hu , Xiaoyong Wei , Zimeng Hu , Vladimir Shur , Li Jin , Denis Alikin
Barium titanate is a classical ferroelectric material that exhibits a jump-like behavior in the order parameter, spontaneous polarization, near the temperature of its transition to the paraelectric phase. This serves as a textbook example of a first-order phase transition, marked by the coexistence of polar and non-polar phase regions. Despite compelling evidence of the gradual phase transformation across Curie temperature (TC) and partial retention of ferroelectric properties above TC, the microscopic mechanisms of the phase retention remain unclear. Current study explains temperature anomalies in the macroscopic characteristics of polycrystalline barium titanate by employing complementary macroscopic and local techniques. Our findings reveal that retention of the polar phase regions is driven by the charged defects, which act as the origin of the spatially non-uniform internal electric fields. The insights from this research offer a deeper understanding of the fundamental mechanisms governing ferroelectric behavior and open new possibilities for tailoring materials with phase coexistence for a wide range of technological applications.
{"title":"Mesoscale mechanisms of the diffuse dielectric behaviour and retention of the polar nano-regions in the polycrystalline ferroelectric BaTiO3","authors":"Lyubov Gimadeeva , Andrei Ushakov , Alexey Pugachev , Anton Turygin , Ruiyi Jing , Qingyuan Hu , Xiaoyong Wei , Zimeng Hu , Vladimir Shur , Li Jin , Denis Alikin","doi":"10.1016/j.jmat.2025.101014","DOIUrl":"10.1016/j.jmat.2025.101014","url":null,"abstract":"<div><div>Barium titanate is a classical ferroelectric material that exhibits a jump-like behavior in the order parameter, spontaneous polarization, near the temperature of its transition to the paraelectric phase. This serves as a textbook example of a first-order phase transition, marked by the coexistence of polar and non-polar phase regions. Despite compelling evidence of the gradual phase transformation across Curie temperature (<em>T</em><sub>C</sub>) and partial retention of ferroelectric properties above <em>T</em><sub>C</sub>, the microscopic mechanisms of the phase retention remain unclear. Current study explains temperature anomalies in the macroscopic characteristics of polycrystalline barium titanate by employing complementary macroscopic and local techniques. Our findings reveal that retention of the polar phase regions is driven by the charged defects, which act as the origin of the spatially non-uniform internal electric fields. The insights from this research offer a deeper understanding of the fundamental mechanisms governing ferroelectric behavior and open new possibilities for tailoring materials with phase coexistence for a wide range of technological applications.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 5","pages":"Article 101014"},"PeriodicalIF":8.4,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142937066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-04DOI: 10.1016/j.jmat.2025.101013
Wenjie Li , Shan Tan , Zhen Fan , Zhiwei Chen , Jiali Ou , Kun Liu , Ruiqiang Tao , Guo Tian , Minghui Qin , Min Zeng , Xubing Lu , Guofu Zhou , Xingsen Gao , Jun-Ming Liu
Neuromorphic computing has attracted great attention for its massive parallelism and high energy efficiency. As the fundamental components of neuromorphic computing systems, artificial neurons play a key role in information processing. However, the development of artificial neurons that can simultaneously incorporate low hardware overhead, high reliability, high speed, and low energy consumption remains a challenge. To address this challenge, we propose and demonstrate a piezoelectric neuron with a simple circuit structure, consisting of a piezoelectric cantilever, a parallel capacitor, and a series resistor. It operates through the synergy between the converse piezoelectric effect and the capacitive charging/discharging. Thanks to this efficient and robust mechanism, the piezoelectric neuron not only implements critical leaky integrate-and-fire functions (including leaky integration, threshold-driven spiking, all-or-nothing response, refractory period, strength-modulated firing frequency, and spatiotemporal integration), but also demonstrates small cycle-to-cycle and device-to-device variations (∼1.9% and ∼10.0%, respectively), high endurance (1010), high speed (integration/firing: ∼9.6/∼0.4 μs), and low energy consumption (∼13.4 nJ/spike). Furthermore, spiking neural networks based on piezoelectric neurons are constructed, showing capabilities to implement both supervised and unsupervised learning. This study therefore opens up a new way to develop high-performance artificial neurons by using piezoelectrics, which may facilitate the realization of advanced neuromorphic computing systems.
{"title":"Piezoelectric neuron for neuromorphic computing","authors":"Wenjie Li , Shan Tan , Zhen Fan , Zhiwei Chen , Jiali Ou , Kun Liu , Ruiqiang Tao , Guo Tian , Minghui Qin , Min Zeng , Xubing Lu , Guofu Zhou , Xingsen Gao , Jun-Ming Liu","doi":"10.1016/j.jmat.2025.101013","DOIUrl":"10.1016/j.jmat.2025.101013","url":null,"abstract":"<div><div>Neuromorphic computing has attracted great attention for its massive parallelism and high energy efficiency. As the fundamental components of neuromorphic computing systems, artificial neurons play a key role in information processing. However, the development of artificial neurons that can simultaneously incorporate low hardware overhead, high reliability, high speed, and low energy consumption remains a challenge. To address this challenge, we propose and demonstrate a piezoelectric neuron with a simple circuit structure, consisting of a piezoelectric cantilever, a parallel capacitor, and a series resistor. It operates through the synergy between the converse piezoelectric effect and the capacitive charging/discharging. Thanks to this efficient and robust mechanism, the piezoelectric neuron not only implements critical leaky integrate-and-fire functions (including leaky integration, threshold-driven spiking, all-or-nothing response, refractory period, strength-modulated firing frequency, and spatiotemporal integration), but also demonstrates small cycle-to-cycle and device-to-device variations (∼1.9% and ∼10.0%, respectively), high endurance (10<sup>10</sup>), high speed (integration/firing: ∼9.6/∼0.4 μs), and low energy consumption (∼13.4 nJ/spike). Furthermore, spiking neural networks based on piezoelectric neurons are constructed, showing capabilities to implement both supervised and unsupervised learning. This study therefore opens up a new way to develop high-performance artificial neurons by using piezoelectrics, which may facilitate the realization of advanced neuromorphic computing systems.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 5","pages":"Article 101013"},"PeriodicalIF":8.4,"publicationDate":"2025-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142924677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-04DOI: 10.1016/j.jmat.2025.101011
Mingming Sheng , Junbin Lu , Hongyu Gong , Jincheng Yu , Jianqiang Bi , Weibin Zhang , Guowen Chen , Jianxin Li , Jie Jing , Yujun Zhang
Boron nitride nanoflakes (BNNF) are rendered as ideal thermal conductivity fillers for thermal interface materials (TIMs) due to their ultrahigh thermal conductivity (TC) and superior electronic insulation. However, it is difficult to guarantee the high yield of well dispersed BNNF in the polymer matrix for industrial production. Herein, we propose a novel “in-situ exfoliation” strategy to fabricate the thin BNNF via chemical bonding engineering. By enhancing the π–π stacking between the inclusion and matrix, the average thickness of the BN is efficiently reduced during the three-roll mixing process. The as-prepared BNNF composite presents ultrahigh in-plane TC (10.58 W·m−1·K−1) with 49.5% (in mass) BN loading at 100 parts per hundreds of rubber (phr) with simultaneously enhanced flexibility. Notably, the tensile strength, the initial thermal decomposition temperatures (T5%) and elongation at break of the composite can reach 4.94 MPa, 470.6 °C and 98%, respectively. Our LED chip cooling tests validate the outstanding heat dissipation ability of the composites for TIM applications. Furthermore, this strategy also proves effective in exfoliating the graphite flakes, demonstrating excellent generalization capability. This work opens up a new avenue for developing the high-performance TIMs, showing huge potential in large-scale production.
{"title":"π–π interactions enable in-situ exfoliation of BN nanoflakes for high-performance thermal interface materials","authors":"Mingming Sheng , Junbin Lu , Hongyu Gong , Jincheng Yu , Jianqiang Bi , Weibin Zhang , Guowen Chen , Jianxin Li , Jie Jing , Yujun Zhang","doi":"10.1016/j.jmat.2025.101011","DOIUrl":"10.1016/j.jmat.2025.101011","url":null,"abstract":"<div><div>Boron nitride nanoflakes (BNNF) are rendered as ideal thermal conductivity fillers for thermal interface materials (TIMs) due to their ultrahigh thermal conductivity (TC) and superior electronic insulation. However, it is difficult to guarantee the high yield of well dispersed BNNF in the polymer matrix for industrial production. Herein, we propose a novel “<em>in-situ</em> exfoliation” strategy to fabricate the thin BNNF <em>via</em> chemical bonding engineering. By enhancing the π–π stacking between the inclusion and matrix, the average thickness of the BN is efficiently reduced during the three-roll mixing process. The as-prepared BNNF composite presents ultrahigh in-plane TC (10.58 W·m<sup>−1</sup>·K<sup>−1</sup>) with 49.5% (in mass) BN loading at 100 parts per hundreds of rubber (phr) with simultaneously enhanced flexibility. Notably, the tensile strength, the initial thermal decomposition temperatures (<em>T</em><sub>5%</sub>) and elongation at break of the composite can reach 4.94 MPa, 470.6 °C and 98%, respectively. Our LED chip cooling tests validate the outstanding heat dissipation ability of the composites for TIM applications. Furthermore, this strategy also proves effective in exfoliating the graphite flakes, demonstrating excellent generalization capability. This work opens up a new avenue for developing the high-performance TIMs, showing huge potential in large-scale production.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 5","pages":"Article 101011"},"PeriodicalIF":8.4,"publicationDate":"2025-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142924675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-04DOI: 10.1016/j.jmat.2025.101012
Bin Yao, Siyuan He, Run Wang, Yihang Zeng, Wenxuan Shi, Yaxuan Zhu, Xinwei Xu, Shaowei Wang, Qing Wang, Hong Wang
Artificial adaptive soft infrared (IR) materials, mimicking the color-changing abilities observed in soft organisms such as cephalopods, hold significant promise in various emerging technologies, including unconventional flexible displays, intelligent camouflage systems, and advanced sensors. In this study, we integrated inherently deformable liquid metal (LM) microdroplets randomly into an elastomer matrix, creating a fully soft material that exhibits elastic compliance akin to soft biological tissue and adaptive IR-reflecting properties in response to compression. Under compressive strains, each LM inclusion behaves as a unit of dynamic IR reflector, transitioning between a contracted droplet with a corrugated surface and an expanded plate-like filler with a relatively smooth surface. These alterations in shape, size, and surface structure allow dynamic modulation of incident IR radiation’s reflection, resulting in reversible changes in IR color (i.e., detected temperature). This mechanism replicates the dynamic alterations observed in cephalopod skin, where chromatophores dynamically manipulate visible light reflection by changing their size and morphology. We demonstrate proof-of-concept applications of this material, showing its ability to modify IR appearance through compression for visualization, with its localized color-change mechanism enabling its use as a tactile sensor in vision-based tactile grippers. These illustrate the potential of this material in emerging adaptive flexible electronics.
{"title":"Cephalopod-inspired soft composite with liquid metal inclusions for tunable infrared modulation","authors":"Bin Yao, Siyuan He, Run Wang, Yihang Zeng, Wenxuan Shi, Yaxuan Zhu, Xinwei Xu, Shaowei Wang, Qing Wang, Hong Wang","doi":"10.1016/j.jmat.2025.101012","DOIUrl":"https://doi.org/10.1016/j.jmat.2025.101012","url":null,"abstract":"Artificial adaptive soft infrared (IR) materials, mimicking the color-changing abilities observed in soft organisms such as cephalopods, hold significant promise in various emerging technologies, including unconventional flexible displays, intelligent camouflage systems, and advanced sensors. In this study, we integrated inherently deformable liquid metal (LM) microdroplets randomly into an elastomer matrix, creating a fully soft material that exhibits elastic compliance akin to soft biological tissue and adaptive IR-reflecting properties in response to compression. Under compressive strains, each LM inclusion behaves as a unit of dynamic IR reflector, transitioning between a contracted droplet with a corrugated surface and an expanded plate-like filler with a relatively smooth surface. These alterations in shape, size, and surface structure allow dynamic modulation of incident IR radiation’s reflection, resulting in reversible changes in IR color (<em>i.e.</em>, detected temperature). This mechanism replicates the dynamic alterations observed in cephalopod skin, where chromatophores dynamically manipulate visible light reflection by changing their size and morphology. We demonstrate proof-of-concept applications of this material, showing its ability to modify IR appearance through compression for visualization, with its localized color-change mechanism enabling its use as a tactile sensor in vision-based tactile grippers. These illustrate the potential of this material in emerging adaptive flexible electronics.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"24 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2025-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142924678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-29DOI: 10.1016/j.jmat.2024.101000
Wenjie Zhang , Yanjun Liu , Guoqiang He , Ziqi Zhao , Yuan Nie , Yiwen Ma , Fangyi Huang , Huanfu Zhou
Dense microwave dielectric ceramics of Sr1–xCaxTm2O4 (x = 0.025–0.300) were fabricated via the conventional solid-state reaction method. Systematical investigations on the impact of Ca2+ on their microstructures, sintering behaviors, and microwave dielectric properties were detailly conducted. The combined XRD data and subsequent refinement demonstrated that all samples exhibited structural conformity with SrTm2O4 and belonged to Pnam space group. Calculations were executed to illustrate the evolution of performance-related chemical bonding parameters associated with Ca2+ on the basis of the PVL theory. High density, lattice energy and narrow full width at half maximum of Raman modes contribute to a performance boost of around 14%. Excellent dielectric properties of Sr0.95Ca0.05Tm2O4, including relative permittivity of 15.97, quality factor of 47,142 GHz, and temperature coefficient of resonant frequency of −24.65 × 10−6 °C−1. Furthermore, Sr0.95Ca0.05Tm2O4 ceramics were designed as rectangular dielectric resonator antennas with 388 MHz bandwidth at the center frequency of 6.525 GHz, along with high simulated radiation efficiency (≥90%) and realized gain (5.80–6.47 dBi), which suggests their considerable potential in 5G communication applications.
{"title":"Investigation of crystal structure and chemical bonds characteristics on microwave properties of novel Ca-doped Sr1–xCaxTm2O4 (x=0.025–0.300) ceramics","authors":"Wenjie Zhang , Yanjun Liu , Guoqiang He , Ziqi Zhao , Yuan Nie , Yiwen Ma , Fangyi Huang , Huanfu Zhou","doi":"10.1016/j.jmat.2024.101000","DOIUrl":"10.1016/j.jmat.2024.101000","url":null,"abstract":"<div><div>Dense microwave dielectric ceramics of Sr<sub>1–<em>x</em></sub>Ca<sub><em>x</em></sub>Tm<sub>2</sub>O<sub>4</sub> (<em>x</em> = 0.025–0.300) were fabricated <em>via</em> the conventional solid-state reaction method. Systematical investigations on the impact of Ca<sup>2+</sup> on their microstructures, sintering behaviors, and microwave dielectric properties were detailly conducted. The combined XRD data and subsequent refinement demonstrated that all samples exhibited structural conformity with SrTm<sub>2</sub>O<sub>4</sub> and belonged to <em>Pnam</em> space group. Calculations were executed to illustrate the evolution of performance-related chemical bonding parameters associated with Ca<sup>2+</sup> on the basis of the PVL theory. High density, lattice energy and narrow full width at half maximum of Raman modes contribute to a performance boost of around 14%. Excellent dielectric properties of Sr<sub>0.95</sub>Ca<sub>0.05</sub>Tm<sub>2</sub>O<sub>4</sub>, including relative permittivity of 15.97, quality factor of 47,142 GHz, and temperature coefficient of resonant frequency of −24.65 × 10<sup>−6</sup> °C<sup>−1</sup>. Furthermore, Sr<sub>0.95</sub>Ca<sub>0.05</sub>Tm<sub>2</sub>O<sub>4</sub> ceramics were designed as rectangular dielectric resonator antennas with 388 MHz bandwidth at the center frequency of 6.525 GHz, along with high simulated radiation efficiency (≥90%) and realized gain (5.80–6.47 dBi), which suggests their considerable potential in 5G communication applications.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 5","pages":"Article 101000"},"PeriodicalIF":8.4,"publicationDate":"2024-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142887610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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