Pub Date : 2026-03-21DOI: 10.1016/j.jmat.2026.101211
Koki Nozawa, Masayuki Murata, Takashi Suemasu, Kaoru Toko
Flexible thermoelectric devices offer unique advantages, including mechanical conformability and suitability for wearable and Internet of Things energy harvesting. However, their integration with low-cost polymer substrates requires the low-temperature synthesis of high-performance thermoelectric materials. In this study, impurity-doped polycrystalline Ge thin films were fabricated via solid-phase crystallization at low temperatures (<500 °C), and their microstructure and transport properties were systematically optimized by controlling the dopant concentration and deposition temperature. As a result, both P-doped n-type and Ga-doped p-type Ge films achieved record-high power factors of 3180 μW⸱m-1⸱K-2 and 1210 μW⸱m-1⸱K-2, respectively, establishing the highest performance reported to date among polycrystalline, environmentally benign thermoelectric materials. The flexible devices demonstrated stable power generation, achieving maximum power densities of 0.70 mW⸱cm-2 in the cross-plane configuration, which represent the highest output characteristics among eco-friendly flexible thermoelectric systems. These results establish low-temperature solid-phase crystallization of doped Ge thin films as a promising route to next-generation flexible thermoelectric devices.
{"title":"Record-high power factors in low-temperature polycrystalline Ge for flexible thermoelectric generators","authors":"Koki Nozawa, Masayuki Murata, Takashi Suemasu, Kaoru Toko","doi":"10.1016/j.jmat.2026.101211","DOIUrl":"https://doi.org/10.1016/j.jmat.2026.101211","url":null,"abstract":"Flexible thermoelectric devices offer unique advantages, including mechanical conformability and suitability for wearable and Internet of Things energy harvesting. However, their integration with low-cost polymer substrates requires the low-temperature synthesis of high-performance thermoelectric materials. In this study, impurity-doped polycrystalline Ge thin films were fabricated <em>via</em> solid-phase crystallization at low temperatures (<500 °C), and their microstructure and transport properties were systematically optimized by controlling the dopant concentration and deposition temperature. As a result, both P-doped n-type and Ga-doped p-type Ge films achieved record-high power factors of 3180 μW⸱m<sup>-1</sup>⸱K<sup>-2</sup> and 1210 μW⸱m<sup>-1</sup>⸱K<sup>-2</sup>, respectively, establishing the highest performance reported to date among polycrystalline, environmentally benign thermoelectric materials. The flexible devices demonstrated stable power generation, achieving maximum power densities of 0.70 mW⸱cm<sup>-2</sup> in the cross-plane configuration, which represent the highest output characteristics among eco-friendly flexible thermoelectric systems. These results establish low-temperature solid-phase crystallization of doped Ge thin films as a promising route to next-generation flexible thermoelectric devices.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"272 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2026-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147492780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Simplifying the technology for regulating dielectric properties and enriching electromagnetic loss mechanisms of layered electromagnetic wave (EMW) absorption materials still faces challenges. Herein, we propose a simple and eco-friendly sieving strategy to control the lateral size (3–50 μm) of multilayered SiP2 flakes for regulating dielectric constants. Moreover, hierarchical-structured 2D SiP2@0D Ni nanoparticles/1D Ni chains low-dimensional aggregates are in-situ constructed on SiP2 flakes via a two-step hydrothermal method to enhance interfacial polarization and electromagnetic synergistic effects. When the lateral size was controlled at 11 μm (SiP2-300), the intrinsic SiP2 exhibits strong reflection loss (RL) value of –38.9 dB at 1.7 mm. Notably, the construction of 2D/0D/1D SiP2@Ni not only maintains a strong RL of –40.1 dB, but also shifts the corresponding absorption frequency from original Ku-band (11.8 GHz) to C-band (7.2 GHz). More importantly, the effective absorption bandwidth is broadened from 2.9 GHz to 4.1 GHz benefiting from the construction of electromagnetic synergy networks. Additionally, the radar cross section (RCS) value (29.14 dB⸱m2) evaluated by the computer simulation technology (CST) results for SiP2@Ni-S2 confirm the excellent dissipation ability. This study provides a new strategy for the application of layered absorbers with low-frequency, broadband and adjustable EMW properties.
{"title":"Tunable lateral size and hierarchical structure SiP2@Ni low-dimensional aggregates for enhanced electromagnetic wave absorption","authors":"Yukai Chang, Yihao Xu, Huilan Zhao, Yingjie Huo, Zhikai Yan, Penghui Li, Shangsheng Li, Meihua Hu, Libo Wang, Qianku Hu, Aiguo Zhou, Renchao Che","doi":"10.1016/j.jmat.2026.101213","DOIUrl":"https://doi.org/10.1016/j.jmat.2026.101213","url":null,"abstract":"Simplifying the technology for regulating dielectric properties and enriching electromagnetic loss mechanisms of layered electromagnetic wave (EMW) absorption materials still faces challenges. Herein, we propose a simple and eco-friendly sieving strategy to control the lateral size (3–50 μm) of multilayered SiP<sub>2</sub> flakes for regulating dielectric constants. Moreover, hierarchical-structured 2D SiP<sub>2</sub>@0D Ni nanoparticles/1D Ni chains low-dimensional aggregates are <em>in-situ</em> constructed on SiP<sub>2</sub> flakes <em>via</em> a two-step hydrothermal method to enhance interfacial polarization and electromagnetic synergistic effects. When the lateral size was controlled at 11 μm (SiP<sub>2</sub>-300), the intrinsic SiP<sub>2</sub> exhibits strong reflection loss (RL) value of –38.9 dB at 1.7 mm. Notably, the construction of 2D/0D/1D SiP<sub>2</sub>@Ni not only maintains a strong RL of –40.1 dB, but also shifts the corresponding absorption frequency from original Ku-band (11.8 GHz) to C-band (7.2 GHz). More importantly, the effective absorption bandwidth is broadened from 2.9 GHz to 4.1 GHz benefiting from the construction of electromagnetic synergy networks. Additionally, the radar cross section (RCS) value (29.14 dB⸱m<sup>2</sup>) evaluated by the computer simulation technology (CST) results for SiP<sub>2</sub>@Ni-S2 confirm the excellent dissipation ability. This study provides a new strategy for the application of layered absorbers with low-frequency, broadband and adjustable EMW properties.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"15 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2026-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147493097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-20DOI: 10.1016/j.jmat.2026.101215
Qianqian Zhong, Qing Tan, Li-Dong Zhao
Over the past few years, the global energy landscape has been undergoing an unprecedented transformation[1]. Excessive energy consumption and increasing carbon emissions have contributed to energy resource scarcity, climate change, and environmental pollution issues[2]. These challenges accelerated sustainable development in the renewable energy industry, especially in eco-friendly advanced technology[1]. Thermoelectric (TE) technology, which uses solid-state internal charge carrier migration to achieve direct conversion between thermal energy and electricity is a new energy technology garnering widespread attention in energy and environmental research[2], [3]. It offers an effective way not only to develop the photovoltaic solar power hybrid technology, semiconductor refrigeration, and long-term power supply in the aerospace field, but also to demonstrate its unique value in waste heat recovery in industry[4]. Compared with traditional strategies, TE technology has several advantages: customizable size, high reliability, zero emission, no mechanical moving components, and precise temperature control[1]. Although the discovery of TE effects (Seebeck effect, Peltier effect, and Thomson effect) was as early as the 1820s, the development of conventional thermoelectric materials remained stagnant for an extended period[1], [2]. It was not until the breakthroughs in semiconductor technology during the 1950s that the field entered a critical phase of commercialization[1], [2]. However, in the industry and civilian technology sector, the primary challenge of thermoelectric technology is the achievement of high energy conversion efficiency, which is contingent on the properties of thermoelectric materials[5]. It can be evaluated by the material dimensionless figure of merit ZT (ZT= S2σT/κ), where S, σ, κ, T denote the Seebeck coefficient, electrical conductivity, thermal conductivity, and absolute temperature of the material, respectively[1], [2].
{"title":"Synergistic optimization of SnSe/SnS thermoelectrics: from material breakthroughs to device integration","authors":"Qianqian Zhong, Qing Tan, Li-Dong Zhao","doi":"10.1016/j.jmat.2026.101215","DOIUrl":"https://doi.org/10.1016/j.jmat.2026.101215","url":null,"abstract":"Over the past few years, the global energy landscape has been undergoing an unprecedented transformation<span><span><sup>[1]</sup></span></span>. Excessive energy consumption and increasing carbon emissions have contributed to energy resource scarcity, climate change, and environmental pollution issues<span><span><sup>[2]</sup></span></span>. These challenges accelerated sustainable development in the renewable energy industry, especially in eco-friendly advanced technology<span><span><sup>[1]</sup></span></span>. Thermoelectric (TE) technology, which uses solid-state internal charge carrier migration to achieve direct conversion between thermal energy and electricity is a new energy technology garnering widespread attention in energy and environmental research<span><span>[2]</span></span>, <span><span>[3]</span></span>. It offers an effective way not only to develop the photovoltaic solar power hybrid technology, semiconductor refrigeration, and long-term power supply in the aerospace field, but also to demonstrate its unique value in waste heat recovery in industry<span><span><sup>[4]</sup></span></span>. Compared with traditional strategies, TE technology has several advantages: customizable size, high reliability, zero emission, no mechanical moving components, and precise temperature control<span><span><sup>[1]</sup></span></span>. Although the discovery of TE effects (Seebeck effect, Peltier effect, and Thomson effect) was as early as the 1820s, the development of conventional thermoelectric materials remained stagnant for an extended period<span><span>[1]</span></span>, <span><span>[2]</span></span>. It was not until the breakthroughs in semiconductor technology during the 1950s that the field entered a critical phase of commercialization<span><span>[1]</span></span>, <span><span>[2]</span></span>. However, in the industry and civilian technology sector, the primary challenge of thermoelectric technology is the achievement of high energy conversion efficiency, which is contingent on the properties of thermoelectric materials<span><span><sup>[5]</sup></span></span>. It can be evaluated by the material dimensionless figure of merit <em>ZT</em> (<em>ZT</em>= <em>S</em><sup><em>2</em></sup><em>σT/κ</em>), where <em>S</em>, <em>σ</em>, <em>κ</em>, <em>T</em> denote the Seebeck coefficient, electrical conductivity, thermal conductivity, and absolute temperature of the material, respectively<span><span>[1]</span></span>, <span><span>[2]</span></span>.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"83 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2026-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147493100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-20DOI: 10.1016/j.jmat.2026.101207
Pankaj Priyadarshi, Neophytos Neophytou
Energy filtering and modulation doping are two well-established techniques that have been used independently to enhance the thermoelectric power factor of materials, albeit with moderate success. Energy filtering introduces potential barriers or selective scattering that filter out lower-energy, ‘cold’ carriers to improve the Seebeck coefficient. Modulation doping allows high carrier densities without the mobility degradation typically caused by dopant species, which enhances the electronic conductivity. In this work, using advanced Monte Carlo simulations, coupled self-consistently with electrostatics, we compute the thermoelectric transport in materials containing periodically placed cavity regions filled with dopant species. The latter enables modulation doping effects, but additionally, careful design of these geometries can shape the band profile in a way that facilitates energy filtering. This synergistic effect enables ultra-high thermoelectric power factors, achieving values more than five times greater than the optimal maximum value of the corresponding uniformly doped material. The proposed structures can be fabricated using standard methods, offering new directions in energy-efficient thermoelectric harvesting and cooling applications.
{"title":"Synergy of Energy Filtering and Modulation Doping for Large Thermoelectric Power Factors in Nanocavity Materials","authors":"Pankaj Priyadarshi, Neophytos Neophytou","doi":"10.1016/j.jmat.2026.101207","DOIUrl":"https://doi.org/10.1016/j.jmat.2026.101207","url":null,"abstract":"Energy filtering and modulation doping are two well-established techniques that have been used independently to enhance the thermoelectric power factor of materials, albeit with moderate success. Energy filtering introduces potential barriers or selective scattering that filter out lower-energy, ‘cold’ carriers to improve the Seebeck coefficient. Modulation doping allows high carrier densities without the mobility degradation typically caused by dopant species, which enhances the electronic conductivity. In this work, using advanced Monte Carlo simulations, coupled self-consistently with electrostatics, we compute the thermoelectric transport in materials containing periodically placed cavity regions filled with dopant species. The latter enables modulation doping effects, but additionally, careful design of these geometries can shape the band profile in a way that facilitates energy filtering. This synergistic effect enables ultra-high thermoelectric power factors, achieving values more than five times greater than the optimal maximum value of the corresponding uniformly doped material. The proposed structures can be fabricated using standard methods, offering new directions in energy-efficient thermoelectric harvesting and cooling applications.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2026-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147492781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-19DOI: 10.1016/j.jmat.2026.101212
Jun-Cheol Park, WooJun Seol, Sihyeon Baek, Donghyeon Lee, Seong Min Park, Seon Je Kim, Young-Min Kim, Hu Young Jeong, Ji Young Jo, Sanghan Lee
The development of next-generation memory architectures is essential to overcoming limitations of conventional architectures, notably the von Neumann bottleneck. Among emerging technologies, memristors have attracted considerable attention due to their scalability, low power consumption, and neuromorphic potential. However, limited endurance and retention, as well as process-integration constraints, continue to impede practical deployment. HfO2-based memristors are promising due to silicon compatibility and thermal stability, yet switching stability remains a key challenge. Here, we systematically investigate the structural role of the orthorhombic phase in Hf0.5Zr0.5O2 (HZO)-based memristors during the degradation process. Using in situ synchrotron X-ray diffraction (XRD) under an applied electric field, we tracked the field-driven structural evolution over repeated SET/RESET cycles. The orthorhombic phase diffraction intensity progressively decreases and peak broadening increases with cycling, while no distinct shift indicative of a macroscopic phase transition is observed within the experimental resolution. This degradation of crystallinity correlates with the rupture of conductive filaments and eventual device breakdown. These findings highlight the critical role of the orthorhombic phase in both switching behavior and device failure, providing insight into phase-engineered stability in memristive devices.
{"title":"Role of the orthorhombic phase in endurance degradation of Hf0.5Zr0.5O2 memristors","authors":"Jun-Cheol Park, WooJun Seol, Sihyeon Baek, Donghyeon Lee, Seong Min Park, Seon Je Kim, Young-Min Kim, Hu Young Jeong, Ji Young Jo, Sanghan Lee","doi":"10.1016/j.jmat.2026.101212","DOIUrl":"https://doi.org/10.1016/j.jmat.2026.101212","url":null,"abstract":"The development of next-generation memory architectures is essential to overcoming limitations of conventional architectures, notably the von Neumann bottleneck. Among emerging technologies, memristors have attracted considerable attention due to their scalability, low power consumption, and neuromorphic potential. However, limited endurance and retention, as well as process-integration constraints, continue to impede practical deployment. HfO<sub>2</sub>-based memristors are promising due to silicon compatibility and thermal stability, yet switching stability remains a key challenge. Here, we systematically investigate the structural role of the orthorhombic phase in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO)-based memristors during the degradation process. Using <em>in situ</em> synchrotron X-ray diffraction (XRD) under an applied electric field, we tracked the field-driven structural evolution over repeated SET/RESET cycles. The orthorhombic phase diffraction intensity progressively decreases and peak broadening increases with cycling, while no distinct shift indicative of a macroscopic phase transition is observed within the experimental resolution. This degradation of crystallinity correlates with the rupture of conductive filaments and eventual device breakdown. These findings highlight the critical role of the orthorhombic phase in both switching behavior and device failure, providing insight into phase-engineered stability in memristive devices.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"60 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2026-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147492782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-18DOI: 10.1016/j.jmat.2026.101214
Chuchu Guo, Jie Liang, Fang Ye, Laifei Cheng, Xiang Liuyi
Silicon carbide (SiC) aerogels hold immense promise for extreme environment applications; however, conventional homogeneous architectures hinder their multifunctional integration. Herein, a sandwich-structured SiC nanowire aerogel with gradient porosity was engineered through a one-step in situ growth strategy, combining a dense sub-micropore (< 1 μm) shell and a macroporous (10–360 μm) core. The nanoconfined pores of the shell suppress gas-phase thermal transport by limiting molecular collisions, while the air-entrapped macropores of the core minimize solid-phase conduction, synergistically yielding a low thermal conductivity of 0.05 W/(m·K), 33% lower than that of the homogeneous counterparts. The continuous gradient interface eliminates interfacial delamination and redistributes stress, achieving a strong mechanical resilience (11.2 kPa compressive strength) via shell-layer nanowire friction and elastic recovery (90% strain retention after 100 cycles) through core-layer dendritic flexibility. Single-crystal nanowires, stabilized by a self-passivating amorphous layer (∼20 nm), ensure structural integrity at 1400 °C with negligible oxidation. Furthermore, the hierarchical architecture facilitates broadband microwave absorption via gradient impedance matching and multiscale reflections. By integrating template-guided polymer conversion and catalyst-directed nanowire assembly, this work pioneers a scalable paradigm for multifunctional aerogels that combine extreme thermal insulation, mechanical durability, and microwave absorption properties, providing a transformative solution for next-generation aerospace thermal protection systems.
{"title":"Thermal insulation and structural performance of sandwich-structured SiC nanowire aerogels prepared via a one-step synthesis","authors":"Chuchu Guo, Jie Liang, Fang Ye, Laifei Cheng, Xiang Liuyi","doi":"10.1016/j.jmat.2026.101214","DOIUrl":"https://doi.org/10.1016/j.jmat.2026.101214","url":null,"abstract":"Silicon carbide (SiC) aerogels hold immense promise for extreme environment applications; however, conventional homogeneous architectures hinder their multifunctional integration. Herein, a sandwich-structured SiC nanowire aerogel with gradient porosity was engineered through a one-step <em>in situ</em> growth strategy, combining a dense sub-micropore (< 1 μm) shell and a macroporous (10–360 μm) core. The nanoconfined pores of the shell suppress gas-phase thermal transport by limiting molecular collisions, while the air-entrapped macropores of the core minimize solid-phase conduction, synergistically yielding a low thermal conductivity of 0.05 W/(m·K), 33% lower than that of the homogeneous counterparts. The continuous gradient interface eliminates interfacial delamination and redistributes stress, achieving a strong mechanical resilience (11.2 kPa compressive strength) <em>via</em> shell-layer nanowire friction and elastic recovery (90% strain retention after 100 cycles) through core-layer dendritic flexibility. Single-crystal nanowires, stabilized by a self-passivating amorphous layer (∼20 nm), ensure structural integrity at 1400 °C with negligible oxidation. Furthermore, the hierarchical architecture facilitates broadband microwave absorption <em>via</em> gradient impedance matching and multiscale reflections. By integrating template-guided polymer conversion and catalyst-directed nanowire assembly, this work pioneers a scalable paradigm for multifunctional aerogels that combine extreme thermal insulation, mechanical durability, and microwave absorption properties, providing a transformative solution for next-generation aerospace thermal protection systems.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"14 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2026-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147471135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-17DOI: 10.1016/j.jmat.2026.101202
Yayun Deng, Shijing Li, Ya Ning, Xiaojun Zeng
Two-dimensional (2D) materials, especially their heterostructures, have garnered significant attention in the field of electromagnetic wave (EMW) absorption, owing to their high specific surface area and the capability to extend EMW propagation paths. However, conventional 2D/2D heterostructures frequently encounter challenges such as limited interfacial diversity, poor impedance matching, and insufficient synergistic effects of loss mechanisms, which collectively constrain further advancement in EMW absorption. To address these limitations, we have engineered a novel 2D/2D/2D hierarchical heterostructure, denoted as Bi2MoO6/BiSx@nitrogen-doped carbon/MoS2 (Bi2MoO6/BiSx@NC/MoS2). The distinctive architecture of this heterostructure features a rational layered configuration: the outer MoS2 layer functions as an “impedance matching layer” to promote EMW entry; the intermediate NC layer serves as a polarization-induced “trapping layer” to suppress secondary reflection; and the inner Bi2MoO6/BiSx layer acts as the “absorption layer” responsible for core energy dissipation. This deliberate multi-layer design facilitates interconnected microcurrent networks, induces multi-interface polarization, and harnesses multi-component hybridization effects, thereby achieving optimized impedance matching and synergistic dielectric/magnetic losses. Consequently, the designed heterostructure inherits exceptional EMW absorption performance, with an ultra-strong reflection loss (RL) of –63.57 dB and a broad effective absorption bandwidth (EAB) of 3.55 GHz at a matching thickness of only 2.85 mm. This work provides valuable insights into the structural design of advanced 2D heterostructures and offers a functional unit analysis perspective for developing high-performance EMW absorbers.
{"title":"Hybridization, microcurrent networks, and multi-interface effects in 2D/2D/2D Bi2MoO6/BiSx@NC/MoS2 heterostructure for electromagnetic wave absorption","authors":"Yayun Deng, Shijing Li, Ya Ning, Xiaojun Zeng","doi":"10.1016/j.jmat.2026.101202","DOIUrl":"https://doi.org/10.1016/j.jmat.2026.101202","url":null,"abstract":"Two-dimensional (2D) materials, especially their heterostructures, have garnered significant attention in the field of electromagnetic wave (EMW) absorption, owing to their high specific surface area and the capability to extend EMW propagation paths. However, conventional 2D/2D heterostructures frequently encounter challenges such as limited interfacial diversity, poor impedance matching, and insufficient synergistic effects of loss mechanisms, which collectively constrain further advancement in EMW absorption. To address these limitations, we have engineered a novel 2D/2D/2D hierarchical heterostructure, denoted as Bi<sub>2</sub>MoO<sub>6</sub>/BiS<sub><em>x</em></sub>@nitrogen-doped carbon/MoS<sub>2</sub> (Bi<sub>2</sub>MoO<sub>6</sub>/BiS<sub><em>x</em></sub>@NC/MoS<sub>2</sub>). The distinctive architecture of this heterostructure features a rational layered configuration: the outer MoS<sub>2</sub> layer functions as an “impedance matching layer” to promote EMW entry; the intermediate NC layer serves as a polarization-induced “trapping layer” to suppress secondary reflection; and the inner Bi<sub>2</sub>MoO<sub>6</sub>/BiS<sub><em>x</em></sub> layer acts as the “absorption layer” responsible for core energy dissipation. This deliberate multi-layer design facilitates interconnected microcurrent networks, induces multi-interface polarization, and harnesses multi-component hybridization effects, thereby achieving optimized impedance matching and synergistic dielectric/magnetic losses. Consequently, the designed heterostructure inherits exceptional EMW absorption performance, with an ultra-strong reflection loss (<em>R</em><sub>L</sub>) of –63.57 dB and a broad effective absorption bandwidth (EAB) of 3.55 GHz at a matching thickness of only 2.85 mm. This work provides valuable insights into the structural design of advanced 2D heterostructures and offers a functional unit analysis perspective for developing high-performance EMW absorbers.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"27 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2026-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147471136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-16DOI: 10.1016/j.jmat.2026.101210
Jing-Feng Li, Samuel S. Mao, Ce-Wen Nan
Launched in 2015, Journal of Materiomics (JMAT) emerged as a timely response to the rapid development of materials science, in particular, the global materials genome initiatives. It serves as a dedicated, peer-reviewed forum for disseminating high-quality research across the broad domain of materials science, with particular emphases on systematic investigations into the interrelationships among compositions, processes, structures, properties, and performances of advanced inorganic materials. With an official abbreviated title for citation, J. Materiomics, “JMAT” is used informally as a shorthand.
{"title":"A Decade of Excellence: Celebrating 10 Years of Journal of Materiomics","authors":"Jing-Feng Li, Samuel S. Mao, Ce-Wen Nan","doi":"10.1016/j.jmat.2026.101210","DOIUrl":"https://doi.org/10.1016/j.jmat.2026.101210","url":null,"abstract":"Launched in 2015, <em>Journal of Materiomics</em> (JMAT) emerged as a timely response to the rapid development of materials science, in particular, the global materials genome initiatives. It serves as a dedicated, peer-reviewed forum for disseminating high-quality research across the broad domain of materials science, with particular emphases on systematic investigations into the interrelationships among compositions, processes, structures, properties, and performances of advanced inorganic materials. With an official abbreviated title for citation, <em>J. Materiomics</em>, “JMAT” is used informally as a shorthand.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"282 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2026-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147465993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-15DOI: 10.1016/j.jmat.2026.101208
Aleksandr A. Kokin, Victoria P. Chertkova, Egor I. Poltorykhin, Pavel A. Sinitsyn, Eduard E. Levin, Sergey V. Ryazantsev, Junye Cheng, Victoria A. Nikitina
The study explores cobalt sulfide electrocatalysts for alkaline water splitting, focusing on the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). We compare sulfur-rich and sulfur-poor amorphous cobalt-based materials, specifically examining how composition, morphology, and chemical speciation influence catalytic activity and stability under reaction conditions. A key finding is the different transformation behaviors of sulfur-poor and sulfur-rich materials in alkaline environments and their impact on HER and OER performance. The study highlights that the chosen electrodeposition method significantly impacts the composition, morphology, and most importantly, the dynamic surface transformation behavior of cobalt sulfide catalysts, which, in turn, dictates their performance and stability for either OER or HER in alkaline water splitting. The sulfur-rich materials deposited from nonaqueous solutions underwent a fast and complete transformation into oxyhydroxide species, which represent the OER-active centers. Sulfur-poor materials obtained from aqueous solutions, which exhibited relative stabilization of the sulfide functionality, are more effective for the HER. However, the active sulfide species present in these materials is unstable under prolonged polarization in alkaline HER conditions, and as the pristine sulfide transforms into a hydroxide, the catalytic activity declines significantly.
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