{"title":"Homochiral carbon nanotube van der Waals crystals","authors":"Zhichun Zhang, Yi Chen, Peiyue Shen, Jiajun Chen, Sen Wang, Bo Wang, Saiqun Ma, Bosai Lyu, Xianliang Zhou, Shuo Lou, Zhenghan Wu, Yufeng Xie, Chengjia Zhang, Liguo Wang, Kunqi Xu, Haonan Li, Guohua Wang, Kenji Watanabe, Takashi Taniguchi, Dong Qian, Jinfeng Jia, Qi Liang, Xiaoqun Wang, Wei Yang, Guangyu Zhang, Chuanhong Jin, Wengen Ouyang, Zhiwen Shi","doi":"10.1126/science.adu1756","DOIUrl":null,"url":null,"abstract":"<div >For applications of single-walled carbon nanotubes (SWNTs) in integrated circuits, it is crucial to have high–tube density arrays of SWNTs that are well aligned and purely semiconducting. In this work, we report on the direct growth of close-packed SWNT arrays on hexagonal boron nitride (hBN) substrates, demonstrating high alignment and uniform chirality within each array. Molecular dynamics simulations suggest that a self-assembly growth mechanism resulted from the intertube van der Waals attraction and the ultralow sliding friction of SWNTs on the atomically flat hBN substrate. Field-effect transistors constructed from the grown SWNT array exhibit high performance at room temperature, with mobilities of up to 2000 square centimeters per volt per second, on/off ratios of ~10<sup>7</sup>, and a maximum current density of ~6 milliamperes per micrometer.</div>","PeriodicalId":21678,"journal":{"name":"Science","volume":"387 6740","pages":""},"PeriodicalIF":45.8000,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science","FirstCategoryId":"103","ListUrlMain":"https://www.science.org/doi/10.1126/science.adu1756","RegionNum":1,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
引用次数: 0
Abstract
For applications of single-walled carbon nanotubes (SWNTs) in integrated circuits, it is crucial to have high–tube density arrays of SWNTs that are well aligned and purely semiconducting. In this work, we report on the direct growth of close-packed SWNT arrays on hexagonal boron nitride (hBN) substrates, demonstrating high alignment and uniform chirality within each array. Molecular dynamics simulations suggest that a self-assembly growth mechanism resulted from the intertube van der Waals attraction and the ultralow sliding friction of SWNTs on the atomically flat hBN substrate. Field-effect transistors constructed from the grown SWNT array exhibit high performance at room temperature, with mobilities of up to 2000 square centimeters per volt per second, on/off ratios of ~107, and a maximum current density of ~6 milliamperes per micrometer.
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