Low-dielectric benzocyclobutenyl polysiloxane resin: spatial structure design and photosensitive patterning performance†

IF 3.9 3区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY RSC Advances Pub Date : 2025-03-14 DOI:10.1039/D4RA08985E
Juan Peng, Qiuxia Peng, Li Fan, Xian Li, Jiajun Ma and Junxiao Yang
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Abstract

With the development of miniaturization and the high integration of semiconductor devices, higher performance requirements are put forward for polymer photoresists. In this paper, a benzocyclobutene-based polysiloxane photosensitive resin was prepared by sol–gel method, which was well patterned and cured quickly after UV light curing, with a minimum line width and line spacing of 10 μm. The benign combination of benzocyclobutene group (BCB) and polysiloxane in the resin makes the resin exhibit good low dielectric properties (k = 2.79) and excellent thermal properties and mechanical properties, which is different from traditional thermosetting resins.

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来源期刊
RSC Advances
RSC Advances chemical sciences-
CiteScore
7.50
自引率
2.60%
发文量
3116
审稿时长
1.6 months
期刊介绍: An international, peer-reviewed journal covering all of the chemical sciences, including multidisciplinary and emerging areas. RSC Advances is a gold open access journal allowing researchers free access to research articles, and offering an affordable open access publishing option for authors around the world.
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