Thermal and plasma-enhanced ALD for the synthesis of inverse opal Al2O3 and its composite materials

IF 4.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Vacuum Pub Date : 2025-08-01 Epub Date: 2025-03-12 DOI:10.1016/j.vacuum.2025.114254
Hamsasew Hankebo Lemago , Soeun Choi Arwen , Dóra Hessz , Gyula Jágerszki , Petra Pál , Csaba Cserháti , Eszter Mónika Baradács , Tamás Fodor , Zoltán Erdélyi , Imre Miklós Szilágyi
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Abstract

This study explores the synthesis and characterization of inverse opal photonic crystals (IOPC) composed of Al2O3 and its composites, coated with ultra-thin ZnO and TiO2 layers using thermal atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). Polystyrene (PS) opal nanospheres (460 nm) served as a template on a silicon wafer. Al2O3 was infiltrated into a PS opal template and subsequently calcined to remove the template. Ultra-thin ZnO and TiO2 layers were deposited via TALD/PEALD to form composite IOPCs. Characterization by SEM/EDX, TG, UV–Vis spectroscopy, atomic force microscopy (AFM), photoluminescence (PL), and XPS confirmed the periodic, interconnected IO structures. The Al2O3 IOPC demonstrated template removal and a reduced sphere diameter to ∼433 nm. Composite structures-maintained periodicity, with TALD yielding smoother surfaces compared to PEALD. The incorporation of ZnO and TiO2 layers increased surface roughness. UV–Vis spectroscopy revealed absorption peaks at 275 nm for Al2O3, with additional peaks at 400 nm and 529 nm related to the photonic band gap and slow photon effects. XPS analysis reveals characteristic peaks for Al2O3, ZnO, and TiO2, along with oxygen vacancies and aluminum hydroxide formation, while elemental data highlight successful ZnO and TiO2 incorporation with PEALD outperforming TALD in ZnO deposition. In this study PEALD enhanced film growth and tailored properties, while TALD offered smooth, conformal coatings and precise control over IOPC properties, both contributing to the design of advanced IO-based photonic materials.
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热等离子体增强ALD合成反蛋白石Al2O3及其复合材料
本研究利用热原子层沉积(TALD)和等离子体增强ALD (PEALD)技术制备了由Al2O3及其复合材料组成的逆蛋白石光子晶体(IOPC),并对其进行了表征。聚苯乙烯(PS)蛋白石纳米球(460 nm)作为硅片上的模板。将Al2O3渗透到PS蛋白石模板中,随后煅烧去除模板。通过TALD/PEALD沉积超薄ZnO和TiO2层,形成复合IOPCs。通过SEM/EDX, TG, UV-Vis光谱,原子力显微镜(AFM),光致发光(PL)和XPS表征证实了周期性,相互连接的IO结构。Al2O3 IOPC显示出模板去除和球体直径减小到~ 433 nm。复合材料结构保持周期性,与PEALD相比,TALD的表面更光滑。ZnO和TiO2层的掺入增加了表面粗糙度。紫外可见光谱显示Al2O3在275 nm处的吸收峰,在400 nm和529 nm处的吸收峰与光子带隙和慢光子效应有关。XPS分析揭示了Al2O3、ZnO和TiO2的特征峰,以及氧空位和氢氧化铝的形成,而元素数据显示,在ZnO沉积中,PEALD与ZnO和TiO2的成功结合优于TALD。在这项研究中,PEALD增强了薄膜的生长和定制性能,而TALD提供了光滑的保形涂层和对IOPC性能的精确控制,两者都有助于设计先进的io基光子材料。
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来源期刊
Vacuum
Vacuum 工程技术-材料科学:综合
CiteScore
6.80
自引率
17.50%
发文量
0
审稿时长
34 days
期刊介绍: Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences. A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below. The scope of the journal includes: 1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes). 2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis. 3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification. 4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.
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