Changming Xie, Yaming Zhang, Jiaheng Nie, Ruhao Liu, Xin Cui, Nian Liu, Yan Zhang
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引用次数: 0
Abstract
GaN p-channel transistors with high hole mobility are important for power electronic and high-frequency microwave applications. Here we propose that strain-induced polarization increases hole mobility through biaxial tensile strain and scattering suppression. Under applied strain, the valence band structure and piezoelectric scattering should be regulated by the piezotronic effect. We find that the piezotronic effect can increase hole mobility by 110%. Hole mobility reaches up to 140 cm2/Vs at room temperature and 2700 cm2/Vs at 100 K.
期刊介绍：
Nano Energy is a multidisciplinary, rapid-publication forum of original peer-reviewed contributions on the science and engineering of nanomaterials and nanodevices used in all forms of energy harvesting, conversion, storage, utilization and policy. Through its mixture of articles, reviews, communications, research news, and information on key developments, Nano Energy provides a comprehensive coverage of this exciting and dynamic field which joins nanoscience and nanotechnology with energy science. The journal is relevant to all those who are interested in nanomaterials solutions to the energy problem.
Nano Energy publishes original experimental and theoretical research on all aspects of energy-related research which utilizes nanomaterials and nanotechnology. Manuscripts of four types are considered: review articles which inform readers of the latest research and advances in energy science; rapid communications which feature exciting research breakthroughs in the field; full-length articles which report comprehensive research developments; and news and opinions which comment on topical issues or express views on the developments in related fields.
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