Piezotronic transistor based on strained GaN with high hole mobility

Abstract

GaN p-channel transistors with high hole mobility are important for power electronic and high-frequency microwave applications. Here we propose that strain-induced polarization increases hole mobility through biaxial tensile strain and scattering suppression. Under applied strain, the valence band structure and piezoelectric scattering should be regulated by the piezotronic effect. We find that the piezotronic effect can increase hole mobility by 110 %. Hole mobility reaches up to 140 cm²/Vs at room temperature and 2700 cm²/Vs at 100 K.