Process optimization of AlGaN high temperature reactor and multi-physicals calculation

Abstract

Metal organic chemical vapor deposition (MOCVD) is a typical and effective approach to AlGaN thin film synthesize. High temperature is an effective mean to improve the crystallization quality. However, problems such as low efficiency, low yield and difficult process control are common in the growing process. Based on the consideration of operating pressure, gas flow rate and rotation speed, a high temperature reactor of AlGaN thin film MOCVD growth is proposed in this paper. The process parameters were optimized by CFD simulation, and multi-physicals such as temperature field, pressure field, velocity field and density field were calculated and analyzed by finite element method. The stability of the flow field in the reactor is realized, the parasitic reaction is effectively reduced, and the deposition efficiency and film quality are ensured. This research not only provides an effective scheme for high quality and efficient AlGaN synthesis, but also provides a theoretical basis for subsequent experiments and equipment improvement.