A. N. Tereshchenko, A. A. Zotov, D. S. Korolev, A. A. Nikolskaya, A. N. Mikhaylov, A. I. Belov, D. I. Tetelbaum
{"title":"The Influence of Heat Treatments on the Temperature Dependence of Dislocation Luminescence in Ion-Implanted Silicon","authors":"A. N. Tereshchenko, A. A. Zotov, D. S. Korolev, A. A. Nikolskaya, A. N. Mikhaylov, A. I. Belov, D. I. Tetelbaum","doi":"10.1134/S1027451024702057","DOIUrl":null,"url":null,"abstract":"<p>The work continues the series of studies of the effect of the anomalous temperature dependence of the luminescence of dislocation structures formed by irradiating silicon with Si<sup>+</sup> ions and subsequent additional implantation of B<sup>+</sup> ions. It was found that thermal treatments of the samples lead to a strong shift in the high-temperature maximum intensity of the D1 line on the temperature dependence. It has been shown that the duration of heat treatments affects the intensity of this maximum, its position, and the shape of the luminescence temperature dependence curve. A possible mechanism for the observed temperature behavior of dislocation luminescence is discussed.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 1 supplement","pages":"S193 - S197"},"PeriodicalIF":0.4000,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1134/S1027451024702057","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
The work continues the series of studies of the effect of the anomalous temperature dependence of the luminescence of dislocation structures formed by irradiating silicon with Si+ ions and subsequent additional implantation of B+ ions. It was found that thermal treatments of the samples lead to a strong shift in the high-temperature maximum intensity of the D1 line on the temperature dependence. It has been shown that the duration of heat treatments affects the intensity of this maximum, its position, and the shape of the luminescence temperature dependence curve. A possible mechanism for the observed temperature behavior of dislocation luminescence is discussed.
期刊介绍：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
