{"title":"Vacuum Annealing of Cr–SiС(4H) Schottky Diodes","authors":"A. M. Strel’chuk, E. V. Kalinina","doi":"10.1134/S1027451024702240","DOIUrl":null,"url":null,"abstract":"<p>The effect of isochronous annealing in vacuum at temperatures of 100–400°C on the forward and reverse current-voltage characteristics of Cr–SiC(4H) Schottky diodes is studied. Diodes of different sizes are manufactured using the same technology based on one lightly doped (~4 × 10<sup>14</sup> cm<sup>–3</sup>) epitaxial layer. The current-voltage characteristics are close to ideal in all cases, but their significant spread before annealing, a decrease in the spread, and a shift to the low-voltage region as a result of annealing at 400°C were found. It is assumed that the main diode is in all cases is shunted by a parasitic diode, the barrier height of which is reduced as a result of annealing.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 1 supplement","pages":"S328 - S332"},"PeriodicalIF":0.4000,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1134/S1027451024702240","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
The effect of isochronous annealing in vacuum at temperatures of 100–400°C on the forward and reverse current-voltage characteristics of Cr–SiC(4H) Schottky diodes is studied. Diodes of different sizes are manufactured using the same technology based on one lightly doped (~4 × 1014 cm–3) epitaxial layer. The current-voltage characteristics are close to ideal in all cases, but their significant spread before annealing, a decrease in the spread, and a shift to the low-voltage region as a result of annealing at 400°C were found. It is assumed that the main diode is in all cases is shunted by a parasitic diode, the barrier height of which is reduced as a result of annealing.
期刊介绍：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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