Boron nitride for applications in microelectronics

Szu-Hua Chen, Blanka Magyari-Kope, Chuang-Han Hsu, Wei-Yen Woon, Szuya Sandy Liao
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Abstract

In this Perspective, we survey recent research on boron nitride (BN) including synthesis, integration and simulation aspects from the material engineering perspective for applications in microelectronics industry. First, we discuss the BN history and its process development milestones, with an emphasis on amorphous BN and hexagonal BN deposition process, highlighting the need for deep understanding of precursor and surface chemistry as well as integration issues. Next, we summarize recent material synthesis simulation progress for BN in the context of tackling complex amorphous material network formation mechanisms and discuss new methodology development needs to address current challenges. We propose future research directions towards the co-development between experimental and modelling approaches to further accelerate discovery of additional material property improvements. Finally, overall trends in microelectronic applications of BN and perspectives are presented and categorized into two main directions. This Perspective provides an overview of boron nitride research from the perspective of its synthesis, integration and simulation from the material engineering aspects to applications in microelectronics industry.

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氮化硼在微电子领域的应用
本文从材料工程的角度综述了近年来氮化硼(BN)在微电子工业中的应用,包括合成、集成和仿真等方面的研究进展。首先,我们讨论了氮化硼的历史及其工艺发展里程碑,重点介绍了非晶氮化硼和六方氮化硼的沉积工艺,强调了对前驱体和表面化学以及集成问题的深入理解的必要性。接下来,我们总结了最近在解决复杂非晶材料网络形成机制的背景下,BN的材料合成模拟进展,并讨论了解决当前挑战的新方法发展需求。我们提出了实验和建模方法共同发展的未来研究方向,以进一步加速发现额外的材料性能改进。最后,介绍了氮化硼微电子应用的总体趋势和前景,并将其分为两个主要方向。本展望从材料工程到微电子工业的应用,从氮化硼的合成、集成和仿真等方面综述了氮化硼的研究概况。
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