Polar Hopf rings emerge in antiferroelectrics

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Scripta Materialia Pub Date : 2025-03-19 DOI:10.1016/j.scriptamat.2025.116649
Ke Xu , Shouzhe Dong , Huayu Yang , Changqing Guo , Deshan Liang , Jing Wang , Houbing Huang
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Abstract

Hopfions are widely involved in topology, group theory, optics, etc. Recently Hopfion rings have been successfully characterized in a magnet, which makes them promising objects for electronic information applications. Here, we reveal that high-density polar transitions at domain boundaries are a condition for topological domain generation. Based on this, we investigate polar Hopf rings in the incommensurate antiferroelectric, which consist of two intertwined vortices and are mathematically equivalent to a212link in topology. The superposition of three-dimensional high-frequency polar waves with different orientations at domain boundaries is responsible for the stability of polar Hopf rings. Furthermore, we demonstrate the reversible switching between polar Hopf rings and trivial domain by an electron beam. Our findings of atomic-scale Hopf rings may provide direction for the design of next-generation high-density electronic information devices.

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霍普菲斯广泛涉及拓扑学、群论、光学等领域。最近,Hopfion 环在磁体中被成功地表征出来,这使它们成为电子信息应用的前景广阔的对象。在这里,我们揭示了畴边界的高密度极性转变是拓扑畴产生的条件。在此基础上,我们研究了不互斥反铁电中的极性霍普夫环,它由两个相互交织的漩涡组成,在拓扑数学上等同于 a212link。具有不同方向的三维高频极性波在域边界的叠加是极性霍普夫环稳定的原因。此外,我们还展示了电子束在极性霍普夫环和三维畴之间的可逆切换。我们对原子尺度霍普夫环的发现可能为下一代高密度电子信息设备的设计提供了方向。
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来源期刊
Scripta Materialia
Scripta Materialia 工程技术-材料科学:综合
CiteScore
11.40
自引率
5.00%
发文量
581
审稿时长
34 days
期刊介绍: Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.
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