Investigation on the effect of refine adjusting substrate holder on the preparation of diamond

IF 2 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2025-03-18 DOI:10.1016/j.jcrysgro.2025.128154
J. Weng , J. Liu , X.J. Chen , F. Liu , F.J. Cui , J.H. Wang , L.W. Xiong
{"title":"Investigation on the effect of refine adjusting substrate holder on the preparation of diamond","authors":"J. Weng ,&nbsp;J. Liu ,&nbsp;X.J. Chen ,&nbsp;F. Liu ,&nbsp;F.J. Cui ,&nbsp;J.H. Wang ,&nbsp;L.W. Xiong","doi":"10.1016/j.jcrysgro.2025.128154","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, the growth environment for the SCDs and the diamond film are improved by refine the arrangement of the substrate holder in our self-developed MPCVD apparatus. The arrangement of the substrate holder is controlled by the △h which is kept less than 3.0 mm. The plasma around the substrate holder is systematically researched with multi-physical simulation and OES. The △h is finally selected at 1.5 mm and 0.5 mm to prepare SCDs and diamond film. Using the arrangement of the substrate holder, the cracks in the SCDs put at the edge of the Mo substrate and the fragmentation of the freestanding diamond film are effective avoided. The results turn out that the uniformity of the plasma can be enhanced by reasonable selecting the △h, and in this way the edge effect of the substrate can be effectively utilized. The obtained results provide a guidance for the scalable production of diamond material.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"659 ","pages":"Article 128154"},"PeriodicalIF":2.0000,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024825001022","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0

Abstract

In this work, the growth environment for the SCDs and the diamond film are improved by refine the arrangement of the substrate holder in our self-developed MPCVD apparatus. The arrangement of the substrate holder is controlled by the △h which is kept less than 3.0 mm. The plasma around the substrate holder is systematically researched with multi-physical simulation and OES. The △h is finally selected at 1.5 mm and 0.5 mm to prepare SCDs and diamond film. Using the arrangement of the substrate holder, the cracks in the SCDs put at the edge of the Mo substrate and the fragmentation of the freestanding diamond film are effective avoided. The results turn out that the uniformity of the plasma can be enhanced by reasonable selecting the △h, and in this way the edge effect of the substrate can be effectively utilized. The obtained results provide a guidance for the scalable production of diamond material.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
精细化调整衬底支架对金刚石制备影响的研究
在本工作中,通过改进我们自行开发的MPCVD装置中衬底支架的排列,改善了scd和金刚石膜的生长环境。基板支架的布置由△h控制,△h保持小于3.0 mm。采用多物理模拟和OES技术对衬底支架周围的等离子体进行了系统的研究。最后选择1.5 mm和0.5 mm的△h来制备scd和金刚石膜。通过衬底支架的布置,有效地避免了Mo衬底边缘scd的裂纹和独立金刚石膜的破碎。结果表明,合理选择△h可以提高等离子体的均匀性,从而有效地利用衬底的边缘效应。所得结果为金刚石材料的规模化生产提供了指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
期刊最新文献
Si (Mg) doping in β-Ga2O3 crystals by edge-defined film-fed growth: A comparative analysis of microstructure, bandgap, and temperature-dependent properties Continuous antisolvent crystallization of pyrazinamide in a Coiled Flow Inverter device: Optimization by response surface methodology A theoretical investigation into primary nucleation behavior for cooling crystallization of Nintedanib esylate in methanol solution by experiments and simulations Editorial Board Synthesis of 2D VS2 monolayer by atmospheric-pressure CVD: role of sulphur introduction time
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1