Room-temperature waveguide-integrated photodetector using bolometric effect for mid-infrared spectroscopy applications

IF 23.4 Q1 OPTICS Light-Science & Applications Pub Date : 2025-03-19 DOI:10.1038/s41377-025-01803-3
Joonsup Shim, Jinha Lim, Inki Kim, Jaeyong Jeong, Bong Ho Kim, Seong Kwang Kim, Dae-Myeong Geum, SangHyeon Kim
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Abstract

Waveguide-integrated mid-infrared (MIR) photodetectors are pivotal components for the development of molecular spectroscopy applications, leveraging mature photonic integrated circuit (PIC) technologies. Despite various strategies, critical challenges still remain in achieving broadband photoresponse, cooling-free operation, and large-scale complementary-metal-oxide-semiconductor (CMOS)-compatible manufacturability. To leap beyond these limitations, the bolometric effect – a thermal detection mechanism – is introduced into the waveguide platform. More importantly, we pursue a free-carrier absorption (FCA) process in germanium (Ge) to create an efficient light-absorbing medium, providing a pragmatic solution for full coverage of the MIR spectrum without incorporating exotic materials into CMOS. Here, we present an uncooled waveguide-integrated photodetector based on a Ge-on-insulator (Ge-OI) PIC architecture, which exploits the bolometric effect combined with FCA. Notably, our device exhibits a broadband responsivity of 28.35%/mW across 4030–4360 nm (and potentially beyond), challenging the state of the art, while achieving a noise-equivalent power of 4.03 × 10−7 W/Hz0.5 at 4180 nm. We further demonstrate label-free sensing of gaseous carbon dioxide (CO2) using our integrated photodetector and sensing waveguide on a single chip. This approach to room-temperature waveguide-integrated MIR photodetection, harnessing bolometry with FCA in Ge, not only facilitates the realization of fully integrated lab-on-a-chip systems with wavelength flexibility but also provides a blueprint for MIR PICs with CMOS-foundry-compatibility.

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利用热量效应的室温波导集成光电探测器在中红外光谱中的应用
利用成熟的光子集成电路(PIC)技术,波导集成中红外(MIR)光电探测器是分子光谱应用发展的关键组件。尽管有各种各样的策略,但在实现宽带光响应、无冷却操作和大规模互补金属氧化物半导体(CMOS)兼容的可制造性方面仍然存在关键挑战。为了超越这些限制,在波导平台中引入了热测量效应——一种热检测机制。更重要的是,我们追求锗(Ge)的自由载流子吸收(FCA)工艺,以创造一种高效的光吸收介质,为完全覆盖MIR光谱提供实用的解决方案,而无需将外来材料纳入CMOS。在这里,我们提出了一种基于绝缘体上锗(Ge-OI) PIC架构的非冷却波导集成光电探测器,它利用了热测量效应与FCA相结合。值得注意的是,我们的器件在4030-4360 nm(以及可能超越)范围内具有28.35%/mW的宽带响应率,挑战了目前的技术水平,同时在4180 nm处实现了4.03 × 10−7 W/Hz0.5的噪声等效功率。我们进一步演示了使用我们的集成光电探测器和传感波导在单个芯片上对气态二氧化碳(CO2)的无标签传感。这种室温波导集成MIR光探测方法,利用Ge中的FCA热测量法,不仅有助于实现具有波长灵活性的完全集成的片上实验室系统,而且还为具有cmos代工厂兼容性的MIR pic提供了蓝图。
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来源期刊
Light-Science & Applications
Light-Science & Applications 数理科学, 物理学I, 光学, 凝聚态物性 II :电子结构、电学、磁学和光学性质, 无机非金属材料, 无机非金属类光电信息与功能材料, 工程与材料, 信息科学, 光学和光电子学, 光学和光电子材料, 非线性光学与量子光学
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