Recent Progress on Heterojunction-Based Memristors and Artificial Synapses for Low-Power Neural Morphological Computing

IF 12.1 2区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Small Pub Date : 2025-03-19 DOI:10.1002/smll.202412851
Zhi-Xiang Yin, Hao Chen, Sheng-Feng Yin, Dan Zhang, Xin-Gui Tang, Vellaisamy A L Roy, Qi-Jun Sun
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Abstract

Memristors and artificial synapses have attracted tremendous attention due to their promising potential for application in the field of neural morphological computing, but at the same time, continuous optimization and improvement in energy consumption are also highly desirable. In recent years, it has been demonstrated that heterojunction is of great significance in improving the energy consumption of memristors and artificial synapses. By optimizing the material composition, interface characteristics, and device structure of heterojunctions, energy consumption can be reduced, and performance stability and durability can be improved, providing strong support for achieving low-power neural morphological computing systems. Herein, we review the recent progress on heterojunction-based memristors and artificial synapses by summarizing the working mechanisms and recent advances in heterojunction memristors, in terms of material selection, structure design, fabrication techniques, performance optimization strategies, etc. Then, the applications of heterojunction-based artificial synapses in neuromorphological computing and deep learning are introduced and discussed. After that, the remaining bottlenecks restricting the development of heterojunction-based memristors and artificial synapses are introduced and discussed in detail. Finally, corresponding strategies to overcome the remaining challenges are proposed. We believe this review may shed light on the development of high-performance memristors and artificial synapse devices.

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基于异质结记忆电阻器和人工突触的低功耗神经形态计算研究进展
忆阻器和人工突触因其在神经形态计算领域的应用潜力而备受关注,但与此同时,对能量消耗的不断优化和提高也是非常可取的。近年来,异质结在提高忆阻器和人工突触的能量消耗方面具有重要意义。通过优化异质结的材料组成、界面特性和器件结构,可以降低能耗,提高性能稳定性和耐用性,为实现低功耗神经形态计算系统提供有力支持。本文从材料选择、结构设计、制作工艺、性能优化策略等方面综述了异质结记忆电阻器和人工突触的工作机理和最新进展,并对近年来异质结记忆电阻器和人工突触的研究进展进行了综述。然后,介绍并讨论了基于异质连接的人工突触在神经形态计算和深度学习中的应用。然后,对制约异质结记忆电阻器和人工突触发展的瓶颈进行了详细的介绍和讨论。最后,针对存在的挑战提出了相应的对策。我们相信这一综述将为高性能忆阻器和人工突触器件的发展提供启示。
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来源期刊
Small
Small 工程技术-材料科学:综合
CiteScore
17.70
自引率
3.80%
发文量
1830
审稿时长
2.1 months
期刊介绍: Small serves as an exceptional platform for both experimental and theoretical studies in fundamental and applied interdisciplinary research at the nano- and microscale. The journal offers a compelling mix of peer-reviewed Research Articles, Reviews, Perspectives, and Comments. With a remarkable 2022 Journal Impact Factor of 13.3 (Journal Citation Reports from Clarivate Analytics, 2023), Small remains among the top multidisciplinary journals, covering a wide range of topics at the interface of materials science, chemistry, physics, engineering, medicine, and biology. Small's readership includes biochemists, biologists, biomedical scientists, chemists, engineers, information technologists, materials scientists, physicists, and theoreticians alike.
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