Commensurate, Incommensurate, and Reconstructed Structures of Multilayer Transition Metal Dichalcogenide and Their Applications

IF 12.1 2区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Small Pub Date : 2025-03-19 DOI:10.1002/smll.202412737
Hyun-Geun Oh, Younghyun You, Seungyun Lee, Sangheon Lee, Fan Ren, Stephen J. Pearton, Jihyun Kim, Gwan-Hyoung Lee
{"title":"Commensurate, Incommensurate, and Reconstructed Structures of Multilayer Transition Metal Dichalcogenide and Their Applications","authors":"Hyun-Geun Oh,&nbsp;Younghyun You,&nbsp;Seungyun Lee,&nbsp;Sangheon Lee,&nbsp;Fan Ren,&nbsp;Stephen J. Pearton,&nbsp;Jihyun Kim,&nbsp;Gwan-Hyoung Lee","doi":"10.1002/smll.202412737","DOIUrl":null,"url":null,"abstract":"<p>Multilayer transition metal dichalcogenides (ML-TMDs) with commensurate, incommensurate, and reconstructed structures, have emerged as a class of 2D materials with unique properties that differ significantly from their monolayer counterparts. While previous research has focused on monolayers, the discovery of various novel properties has sparked interest in multilayers with diverse structures engineered through stacking. These materials are characterized by interactions between layers and exhibit remarkable tunability in their structural, optical, and electronic behaviors depending on stacking order, twist angle, and interlayer coupling. This review provides an overview of ML-TMDs and explores their properties such as electronic band structure, optical responses, ferroelectricity, and anomalous Hall effect. Various synthetic methods employed to fabricate ML-TMDs, including mechanical stacking and chemical vapor deposition techniques, with an emphasis on achieving precise control of the twist angles and layer configurations, are discussed. This study further explores potential applications of ML-TMDs in nanoelectronics, optoelectronics, and quantum devices, where their unique properties can be harnessed for next-generation technologies. The critical role played by these materials in the development of future electronic and quantum devices is highlighted.</p>","PeriodicalId":228,"journal":{"name":"Small","volume":"21 30","pages":""},"PeriodicalIF":12.1000,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/smll.202412737","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Small","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/smll.202412737","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Multilayer transition metal dichalcogenides (ML-TMDs) with commensurate, incommensurate, and reconstructed structures, have emerged as a class of 2D materials with unique properties that differ significantly from their monolayer counterparts. While previous research has focused on monolayers, the discovery of various novel properties has sparked interest in multilayers with diverse structures engineered through stacking. These materials are characterized by interactions between layers and exhibit remarkable tunability in their structural, optical, and electronic behaviors depending on stacking order, twist angle, and interlayer coupling. This review provides an overview of ML-TMDs and explores their properties such as electronic band structure, optical responses, ferroelectricity, and anomalous Hall effect. Various synthetic methods employed to fabricate ML-TMDs, including mechanical stacking and chemical vapor deposition techniques, with an emphasis on achieving precise control of the twist angles and layer configurations, are discussed. This study further explores potential applications of ML-TMDs in nanoelectronics, optoelectronics, and quantum devices, where their unique properties can be harnessed for next-generation technologies. The critical role played by these materials in the development of future electronic and quantum devices is highlighted.

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多层过渡金属二硫化物的相称、不相称和重构结构及其应用
多层过渡金属二硫族化合物(ml - tmd)具有相称的、不相称的和重构的结构,已经成为一类具有独特性质的二维材料,与单层材料有很大不同。虽然以前的研究主要集中在单层材料上,但各种新特性的发现引发了人们对通过堆叠设计不同结构的多层材料的兴趣。这些材料的特点是层之间的相互作用,并在其结构、光学和电子行为上表现出显著的可调性,这取决于堆叠顺序、扭转角和层间耦合。本文综述了ml - tmd的研究概况,并对其电子能带结构、光学响应、铁电性和反常霍尔效应等特性进行了探讨。讨论了用于制造ml - tmd的各种合成方法,包括机械堆叠和化学气相沉积技术,重点是实现扭曲角度和层构型的精确控制。本研究进一步探索了ml - tmd在纳米电子学、光电子学和量子器件中的潜在应用,在这些领域中,它们独特的特性可以用于下一代技术。强调了这些材料在未来电子和量子器件发展中的关键作用。
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来源期刊
Small
Small 工程技术-材料科学:综合
CiteScore
17.70
自引率
3.80%
发文量
1830
审稿时长
2.1 months
期刊介绍: Small serves as an exceptional platform for both experimental and theoretical studies in fundamental and applied interdisciplinary research at the nano- and microscale. The journal offers a compelling mix of peer-reviewed Research Articles, Reviews, Perspectives, and Comments. With a remarkable 2022 Journal Impact Factor of 13.3 (Journal Citation Reports from Clarivate Analytics, 2023), Small remains among the top multidisciplinary journals, covering a wide range of topics at the interface of materials science, chemistry, physics, engineering, medicine, and biology. Small's readership includes biochemists, biologists, biomedical scientists, chemists, engineers, information technologists, materials scientists, physicists, and theoreticians alike.
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