Epitaxial high-K barrier AlBN/GaN HEMTs

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED Applied Physics Letters Pub Date : 2025-03-18 DOI:10.1063/5.0235294

Chandrashekhar Savant, Thai-Son Nguyen, Kazuki Nomoto, Saurabh Vishwakarma, Siyuan Ma, Akshey Dhar, Yu-Hsin Chen, Joseph Casamento, David J. Smith, Huili Grace Xing, Debdeep Jena

引用次数: 0

Abstract

We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility transistors that exhibit current densities > 0.25 A/mm, clean current saturation, a low pinch-off voltage of −0.43 V, and a peak transconductance of ∼0.14 S/mm. Transistor performance in this preliminary realization is limited by the contact resistance. Capacitance–voltage measurements reveal that introducing ∼7% B in the epitaxial AlBN barrier on GaN boosts the relative dielectric constant of AlBN to ɛrAlBN∼16, higher than the AlN dielectric constant of ɛrAlN∼9. Epitaxial high-K barrier AlBN/GaN HEMTs can thus extend performance beyond the capabilities of current GaN transistors.

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外延高k势垒AlBN/GaN hemt

我们报告了在碳化硅衬底上生长的外延 AlBN/GaN 异质结中极化诱导的二维电子气 (2DEG)。利用长导电通道中的这种二维电子气体，我们实现了超薄势垒 AlBN/GaN 高电子迁移率晶体管，其电流密度为 > 0.25 A/mm，电流饱和度高，箝位电压低至 -0.43 V，峰值跨导为 ∼0.14 S/mm。初步实现的晶体管性能受到接触电阻的限制。电容-电压测量结果表明，在 GaN 上的外延 AlBN 势垒中引入 ∼7% 的 B，可将 AlBN 的相对介电常数提高到 ɛrAlBN∼16，高于 AlN 的介电常数 ɛrAlN∼9。因此，外延高 K 势垒 AlBN/GaN HEMT 的性能可超越目前的 GaN 晶体管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.