Comprehensive TCAD-Based Single Event Effect Study of TFET-Based 1T DRAM and Crossbar Memory Array

Abstract

In this paper, a comprehensive TCAD-based single event effect (SEE) study on tunnel field effect transistor (TFET) based one transistor dynamic random access memory (1T DRAM) and crossbar memory array is demonstrated through well-calibrated 2-D TCAD simulations. The simulation study reveals that the regions near Gate 2 are more susceptible to SEE. In addition, in comparison to without SEE, when a high energy particle (HEP) strikes the device, the read “1” (R1) current remains the same, however, the read “0” (R0) current increases $\sim ~10\times $ at 358 K. As a result, the read current ratio (IR1/I $_{\mathrm {R0}}$ ) and the sense margin (SM) decreases. The IR1/IR0 ratio with SEE is found to be $\sim ~10^{2}$ , which is $10\times $ lower than ratio without SEE. In addition, the impact of various parameters such as linear energy transfer (LET), HEP strike time, HEP strike moment, and HEP radius on TFET-based 1T DRAM performance is also evaluated. Moreover, for a 2 x 2 crossbar memory array, the combination of SEE with word line disturbance mechanism causes $\sim ~10\times $ reduction in the R1 current at 358 K. Our findings will pave the way for further exploration and designing radiation-hardened TFET-based 1T DRAM for future low-power space applications.