Research on the construction and optoelectronic properties of In2O3/In2S3 heterostructure

IF 2.7 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Letters Pub Date : 2025-03-18 DOI:10.1016/j.matlet.2025.138422

Dayuan Cai, Yang Xu, Yaxin Guo, Dongyun Li, Rui Wang, Fan Wang

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Abstract

In₂O₃ and In₂S₃ are emerging semiconductor materials that exhibit excellent optoelectronic properties due to their wide bandgap, high catalytic activity, and low resistivity. This paper presents the fabrication of nano In₂O₃/In₂S₃ heterostructure composites using sol–gel and hydrothermal methods, resulting in the formation of a P–N junction at their contact surface to enhance the photoelectric conversion efficiency of the materials. The microstructure, crystalline characteristics, and optoelectronic properties of the samples were characterized. The research indicates that the In₂O₃/In₂S₃ heterojunction material is nano flower-shaped and structurally stable. Notably, In₂O₃/In₂S₃-40 exhibits a smaller bandgap value of 2.22 eV, with a light response intensity approximately three times greater than that of blank In₂S₃, measuring about 15 μA/cm². The introduction of In₂O₃ significantly enhances the visible light absorption capacity and the separation efficiency of photo-generated electron-hole pairs in In₂S₃.

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In2O3/In2S3异质结构的结构及光电性能研究

In2O3和In2S3是一种新兴的半导体材料，具有宽带隙、高催化活性和低电阻率等特点。采用溶胶-凝胶法和水热法制备了纳米In2O3/In2S3异质结构复合材料，在其接触面形成了P-N结，提高了材料的光电转换效率。对样品的微观结构、晶体特性和光电子性能进行了表征。研究表明，In2O3/In2S3异质结材料呈纳米花状，结构稳定。值得注意的是，In2O3/In2S3-40具有较小的带隙值，为2.22 eV，光响应强度约为空白In2S3的3倍，约为15 μA/cm2。In2O3的引入显著提高了In2S3的可见光吸收能力和光生电子空穴对的分离效率。

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来源期刊

Materials Letters 工程技术-材料科学：综合

CiteScore

5.60

自引率

3.30%

发文量

1948

审稿时长

50 days

期刊介绍： Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review. Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials. Contributions include, but are not limited to, a variety of topics such as: • Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors • Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart • Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction • Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots. • Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing. • Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic • Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive