Design and analysis of metamaterial-based ultra-broadband micro-scaled absorber with vanadium dioxide (VO2) and silicon dioxide (SiO2) for multiple terahertz applications

Abstract

This research proposes an ultra-broadband terahertz absorber (UBTA) employing a metamaterial (MTM) structure based on vanadium dioxide (VO₂). The top layer of the suggested MTM-UBTA model is made up of VO₂ that is 0.2 µm thick, the bottom layer is made up of 3 µm thick gold material, and the middle layer is made up of silicon dioxide (SiO₂) dielectric material of 7 µm thickness. The simulation results indicate an absorption bandwidth of 4.1 THz, from 2.8 to 6.9 THz, obtained under normal incidence. The suggested absorber maintains absorption above 92 % over a broad operating wavelength of 43.44 μm to 107.06 μm. The main goal of this study is to look into THz metamaterial absorbers based on VO₂ in great detail, including every facet of their design validation and hys RevL through an ECM (Equivalent Circuit Model) approach. Furthermore, the impact of incident and polarization angle on absorbance for TE and TM modes is discussed and polarization insensitivity is verified. The prescribed MTM-ultra-broadband terahertz absorber is suitable for intelligent absorption, terahertz tuning, modulation, cloaking, optic-electro switching, biological sensing, and stealth technology.