Hyunho Kim , Gyuyoung Lee , Seunghwan Lee , Pengzhan Liu , Jongyeong Jeon , Ziyang Wang , Chaerin Park , Jaewon Lee , Hosin Hwang , Chulwoo Bae , Taesung Kim
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引用次数: 0
Abstract
This study investigates the effect of Fe-complex catalysts in improving tungsten chemical mechanical planarization (CMP) by enhancing material removal rate (MRR) and surface quality. EDTA-Fe and citrate-Fe (CTA-Fe) were evaluated against ferric nitrate (Fe(NO3) 3) as reference. The catalysts’ ability to generate hydroxyl radicals via the Fenton reaction and form a tungsten passivation layer (WO3) was evaluated. Results showed CTA-Fe achieved the best CMP performance with an MRR of 766.5 Å/min and a surface roughness (Ra) of 2.51 nm, attributed to continuous hydroxyl radical generation and efficient WO3 layer formation. EDTA-Fe exhibited superior performance in static etch rate (SER) due to rapid initial passivation layer formation but showed lower CMP efficiency with an MRR of 304.4 Å/min and a Ra of 5.49 nm. In addition, Fe-complex catalysts were found to leave less residual iron contamination after CMP compared to Fe(NO3)3. This study elucidates the critical role of hydroxyl radical generation in improving tungsten CMP performance and demonstrates the potential of Fe-complex catalysts for advanced semiconductor manufacturing process.
期刊介绍：
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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