MnCr2O4: A suitable material with significant optical response for optoelectronic devices

Abstract

In current high-tech electronics, a power-efficient and compact light source has an essential role to play in the development of non-destructive and non-invasive detection applications as well as for advancing of technological innovation. In this order, an innovative investigation has been taken into consideration in this paper to characterize the optoelectronic behaviour of MnCr₂O₄ spinel chromite compound based on both experimental and theoretical approaches. The room temperature X-ray diffraction gives rise to a single-phase spinel compound which crystallises in the cubic system with the space group (Fd $\bar{3}$ m). Thanks to the UV–Visible/NIR absorbance and reflectance measurement, the direct semiconducting behaviour (E_dg = 2.41 eV) of chromite sample have been verified. The spectral behaviour of absorbance proves that the sample under study exhibit a broad absorption in the visible range. The high localized state density is confirmed by the significant high Urbach energy value that was observed (E_u = 2.86 eV). Various optical parameter such as refractive index, extinction coefficient, dielectric real and imaginary optical permittivity have been analysed to more investigate experimentally the optoelectronic behaviour of the studied sample. Owing to the Wemple Di-Domenico model additional dispersive parameters have been identified. A comprehensive analysis of the crystal field theory based on the theoretical evaluation of the algebraic Racah tensor was taken into consideration on trivalent chromium Cr³⁺ (3 d³) according to the O_h symmetry site.The demonstrated results are undoubtedly a road to achieving high-power conversion efficiency making our material promising for multitude optoelectronic application.