Real-Time ESD Monitoring and Control in Semiconductor Manufacturing Environments With Silicon Chip of ESD Event Detection

IF 2.4 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of the Electron Devices Society Pub Date : 2025-03-06 DOI:10.1109/JEDS.2025.3548886
Chang-Jiun Lai;Ming-Dou Ker
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Abstract

Integrated circuits are susceptible to electrostatic discharge (ESD) events. Real-time detection and alerting of ESD events in semiconductor manufacturing environments is the key to achieving well ESD control. Additionally, the magnitude and duration of an ESD event are strongly correlated with the specific type of ESD events. The development of a novel ESD event detector, integrated on a single chip and featuring a logarithmic amplifier, a magnitude discriminator, and a time discriminator, has been motivated by this. This detector has been designed and fabricated in a 0.18- $\mu $ m CMOS process. The magnitude of the ESD event can be detected and converted to 5-bit digital output codes, whereas the time duration of the ESD event can be converted to 3-bit digital output codes by the newly developed ESD event detector. It has been proven in field applications that the detected ESD events can be successfully transmitted to the ESD control center through the RF Wi-Fi module, enabling real-time ESD monitoring and control in manufacturing environments.
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半导体制造环境中基于ESD事件检测芯片的ESD实时监测与控制
集成电路容易受到静电放电事件的影响。半导体制造环境中ESD事件的实时检测和报警是实现良好ESD控制的关键。此外,ESD事件的强度和持续时间与特定类型的ESD事件密切相关。一种新型的ESD事件检测器,集成在单个芯片上,具有对数放大器,幅度鉴别器和时间鉴别器,由此得到了发展的动力。该探测器是在0.18- $\mu $ m的CMOS工艺中设计和制造的。新研制的ESD事件检测器可以检测到ESD事件的幅度,并将其转换为5位数字输出码,将ESD事件持续时间转换为3位数字输出码。现场应用证明,检测到的ESD事件可以通过射频Wi-Fi模块成功传输到ESD控制中心,实现制造环境中的实时ESD监测和控制。
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来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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