Strategic Development of Memristors for Neuromorphic Systems: Low-Power and Reconfigurable Operation

IF 26.8 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Advanced Materials Pub Date : 2025-03-25 DOI:10.1002/adma.202413916
Jang Woo Lee, Jiye Han, Boseok Kang, Young Joon Hong, Sungjoo Lee, Il Jeon
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Abstract

The ongoing global energy crisis has heightened the demand for low-power electronic devices, driving interest in neuromorphic computing inspired by the parallel processing of human brains and energy efficiency. Reconfigurable memristors, which integrate both volatile and non-volatile behaviors within a single unit, offer a powerful solution for in-memory computing, addressing the von Neumann bottleneck that limits conventional computing architectures. These versatile devices combine the high density, low power consumption, and adaptability of memristors, positioning them as superior alternatives to traditional complementary metal-oxide-semiconductor (CMOS) technology for emulating brain-like functions. Despite their potential, studies on reconfigurable memristors remain sparse and are often limited to specific materials such as Mott insulators without fully addressing their unique reconfigurability. This review specifically focuses on reconfigurable memristors, examining their dual-mode operation, diverse physical mechanisms, structural designs, material properties, switching behaviors, and neuromorphic applications. It highlights the recent advancements in low-power-consumption solutions within memristor-based neural networks and critically evaluates the challenges in deploying reconfigurable memristors as standalone devices or within artificial neural systems. The review provides in-depth technical insights and quantitative benchmarks to guide the future development and implementation of reconfigurable memristors in low-power neuromorphic computing.

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神经形态系统记忆电阻器的策略发展:低功耗和可重构操作
当前的全球能源危机加剧了对低功耗电子设备的需求,推动了人们对神经形态计算的兴趣,这种计算的灵感来源于人脑的并行处理和能源效率。可重构忆阻器将易失性和非易失性行为集成在一个单元内,为内存计算提供了强大的解决方案,解决了限制传统计算架构的冯-诺依曼瓶颈问题。这些多功能器件结合了忆阻器的高密度、低功耗和适应性,使其成为传统互补金属氧化物半导体(CMOS)技术的优越替代品,用于模拟类脑功能。尽管可重构忆阻器潜力巨大,但对其进行的研究仍然很少,而且往往局限于特定材料,如莫特绝缘体,而没有充分探讨其独特的可重构性。本综述特别关注可重构忆阻器,研究它们的双模运行、各种物理机制、结构设计、材料特性、开关行为和神经形态应用。报告重点介绍了基于忆阻器的神经网络中低功耗解决方案的最新进展,并认真评估了将可重构忆阻器作为独立设备或在人工神经网络中部署所面临的挑战。综述提供了深入的技术见解和量化基准,为可重构忆阻器在低功耗神经形态计算中的未来开发和实施提供了指导。
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来源期刊
Advanced Materials
Advanced Materials 工程技术-材料科学:综合
CiteScore
43.00
自引率
4.10%
发文量
2182
审稿时长
2 months
期刊介绍: Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.
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