Excitonic phenomena in the multilayer QDs: Perturbative approach

Abstract

In the present study, exciton physics, similar to modeling the helium atomic model related to fermionic particles, is studied under a perturbative approach. This motivational model presents computational results for semiconductor nanocrystals with 3D confinement. The Coulomb interaction energy of excitons, the effective bandgap transition energy, and the optical transition rates for the s-wave exciton in the ground state are computed for GaAs/AlGaAs multi-layer quantum dots within the framework of the effective mass approximation. In a perturbative approach, lower transition energies are found for large Coulomb energy values. This behavior is because the Coulomb term is prominent in the effective bandgap, concluding that the perturbation approach in multilayer QDs yields accurate results. Additionally, analysis of optical transition rates, derived from the dipole matrix element and transition energies, enables a better understanding of the optical properties. Analyzing s-wave excitons through transition rates provides significant models for optical sensing and optoelectronic applications.