High-Performance Perovskite Photodetector With Multi-Peak Response Under Edge Illumination Configuration

IF 4.5 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2025-02-13 DOI:10.1109/LED.2025.3541929
Sadeq Abbasi;Xiangyu Zhou;Feiyun Zhao;Aobo Ren;Kai Shen
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Abstract

In this letter, the operational characteristics and performance of perovskite photodetectors were systematically studied under edge illumination, revealing significant performance enhancements in a CsFAPbI3 perovskite device compared to vertical illumination. At 0 V bias, responsivity improved from 8.3 A/W to 214 A/W, and detectivity increased from $1.67 \times \; 10^{{12}}$ to $1.49 \times \; 10^{{13}}$ Jones compared to vertical illumination. The lateral light penetration resulted in distinct and repeatable multi-peak response patterns over a frequency range of 0.2-5 kHz and light intensities of 0.68-6.56 mW/cm2. The dynamic response of the device was effectively modeled as a second-order system, demonstrating its potential for secure communication applications. This setup also enabled precise control over the photodetector’s size at small dimensions by simply adjusting the thickness, achieving an active area of just $10^{-{5}}$ cm2 under edge illumination. This study underscores the promise of edge illumination for optimizing perovskite photodetectors and is currently under further investigation to broaden its applicability.
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边缘照明配置下具有多峰响应的高性能钙钛矿光电探测器
在这封信中,系统地研究了钙钛矿光电探测器在边缘照明下的工作特性和性能,揭示了CsFAPbI3钙钛矿器件与垂直照明相比的显着性能增强。在0 V偏置下,响应率从8.3 A/W提高到214 A/W,探测率从1.67 \times \增加;10^{{12}}$ $ $1.49 \times \;10^{{13}}$ Jones与垂直照明相比。横向光穿透在0.2-5 kHz的频率范围和0.68-6.56 mW/cm2的光强范围内产生了明显且可重复的多峰响应模式。该器件的动态响应被有效地建模为二阶系统,证明了其在安全通信应用中的潜力。这种设置还可以通过简单地调整厚度来精确控制光电探测器的小尺寸,在边缘照明下实现仅$10^{-{5}}$ cm2的有效面积。这项研究强调了边缘照明优化钙钛矿光电探测器的前景,目前正在进一步研究以扩大其适用性。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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